Photosensitive imaging devices and associated methods
First Claim
1. A backside-illuminated photosensitive imager device, comprising:
- a plurality of semiconductor devices including a semiconductor substrate having a light incident side and multiple doped regions forming at least one junction;
a first textured region associated with the semiconductor substrate and positioned to interact with electromagnetic radiation so as to cause at least a portion of said electromagnetic radiation to experience multiple passes within said semiconductor substrate so as to enhance quantum efficiency of said imager device, wherein the first textured region is positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region;
a second textured region associated with the light incident side of the semiconductor substrate, wherein the at least one junction is disposed between the first and second textured regions; and
at least one isolation feature operable to isolate the plurality of semiconductor devices from each other.
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Accused Products
Abstract
Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region.
Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
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Citations
17 Claims
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1. A backside-illuminated photosensitive imager device, comprising:
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a plurality of semiconductor devices including a semiconductor substrate having a light incident side and multiple doped regions forming at least one junction; a first textured region associated with the semiconductor substrate and positioned to interact with electromagnetic radiation so as to cause at least a portion of said electromagnetic radiation to experience multiple passes within said semiconductor substrate so as to enhance quantum efficiency of said imager device, wherein the first textured region is positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region; a second textured region associated with the light incident side of the semiconductor substrate, wherein the at least one junction is disposed between the first and second textured regions; and at least one isolation feature operable to isolate the plurality of semiconductor devices from each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification