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Method for manufacturing semiconductor device comprising adding oxygen to buffer film and insulating film

  • US 10,361,290 B2
  • Filed: 03/12/2015
  • Issued: 07/23/2019
  • Est. Priority Date: 03/14/2014
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming an insulating film over an oxide semiconductor film;

    forming a metal oxide film over the insulating film;

    adding oxygen to the metal oxide film and the insulating film by an ion doping method, an ion implantation method, or plasma treatment after forming the metal oxide film;

    forming a conductive film over the metal oxide film to which oxygen is added; and

    adding an impurity element to the oxide semiconductor film using the conductive film as a mask.

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