Semiconductor device and method for manufacturing the same

• US 10,361,291 B2
• Filed: 05/10/2016
• Issued: 07/23/2019
• Est. Priority Date: 10/24/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koezuka, Junichi, Shima, Yukinori, Tokunaga, Hajime, Sasaki, Toshinari, Murayama, Keisuke, Matsubayashi, Daisuke
• Primary Examiner(s): Page, Dale E
• Assistant Examiner(s): Jefferson, Quovaunda
• Application Number:
  US15/150,587
• Publication Number:
  US 20160254371A1
• Time in Patent Office: 1,169 Days
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02263 deposition from the gas or vapour phase
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78609 for preventing leakage current H01L29/78618 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating film over the gate electrode;

forming a multilayer film including an oxide semiconductor film and an oxide film over the gate insulating film;

forming a pair of electrodes in electrical contact with the multilayer film;

forming a first oxide insulating film over the multilayer film and the pair of electrodes by CVD method; and

forming a second oxide insulating film over the first oxide insulating film by CVD method,

wherein the substrate placed in a treatment chamber which is vacuum-evacuated is held at a temperature higher than or equal to 180°

C. and lower than or equal to 400°

C., pressure in the treatment chamber is set to be greater than or equal to 20 Pa and less than or equal to 250 Pa with introduction of a first source gas into the treatment chamber, and a high-frequency power is supplied to an electrode provided in the treatment chamber to form the first oxide insulating film,

wherein the substrate placed in a treatment chamber which is vacuum-evacuated is held at a temperature higher than or equal to 180°

C. and lower than or equal to 260°

C., pressure in the treatment chamber is set to be greater than or equal to 100 Pa and less than or equal to 250 Pa with introduction of a second source gas into the treatment chamber, and a high-frequency power higher than or equal to 0.17 W/cm² and lower than or equal to 0.5 W/cm² is supplied to an electrode provided in the treatment chamber to form the second oxide insulating film,

wherein each of the oxide semiconductor film and the oxide film contains In—

Ga—

Zn oxide, and

wherein a proportion of Ga in the oxide film is higher than a proportion of Ga in the oxide semiconductor film.

2. The method for manufacturing a semiconductor device according to claim 1,

wherein, as the first oxide insulating film and the second oxide insulating film, a silicon oxide film or a silicon oxynitride film is formed using a deposition gas containing silicon and an oxidizing gas as the first source gas, and

wherein, as the second oxide insulating film, a silicon oxide film or a silicon oxynitride film is formed using a deposition gas containing silicon and an oxidizing gas as the second source gas.

3. The method for manufacturing a semiconductor device according to claim 1,

wherein, as the first oxide insulating film and the second oxide insulating film, a silicon oxynitride film is formed using silane and dinitrogen monoxide as the first source gas, and

wherein, as the second oxide insulating film, a silicon oxynitride film is formed using silane and dinitrogen monoxide as the second source gas.

4. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating film over the gate electrode;

forming a multilayer film including an oxide semiconductor film and an oxide film over the gate insulating film;

forming a pair of electrodes in electrical contact with the multilayer film;

cleaning a surface of the multilayer film between the pair of electrodes;

forming a first oxide insulating film over the multilayer film and the pair of electrodes; and

forming a second oxide insulating film over the first oxide insulating film,

wherein each of the oxide semiconductor film and the oxide film contains In—

Ga—

Zn oxide, and

wherein a proportion of Ga in the oxide film is higher than a proportion of Ga in the oxide semiconductor film.

5. The method for manufacturing a semiconductor device according to claim 4,

wherein, as the first oxide insulating film and the second oxide insulating film, a silicon oxide film or a silicon oxynitride film is formed using a deposition gas containing silicon and an oxidizing gas as a first source gas, and

wherein, as the second oxide insulating film, a silicon oxide film or a silicon oxynitride film is formed using a deposition gas containing silicon and an oxidizing gas as a second source gas.

6. The method for manufacturing a semiconductor device according to claim 4,

wherein, as the first oxide insulating film and the second oxide insulating film, a silicon oxynitride film is formed using silane and dinitrogen monoxide as a first source gas, and

wherein, as the second oxide insulating film, a silicon oxynitride film is formed using silane and dinitrogen monoxide as a second source gas.

7. The method for manufacturing a semiconductor device according to claim 4,

wherein the surface of the multilayer film is cleaned by using a solution selected from the group consisting of a tetramethylammonium hydroxide (TMAH) solution, a diluted hydrofluoric acid solution, an oxalic acid solution, and a phosphorus acid solution.