Fabrication of a strained region on a substrate
First Claim
1. A method of forming a strained channel for a field effect transistor, comprising:
- removing a sacrificial slab from a stack of a channel block on the sacrificial slab, and a stressor island on the channel block, wherein the sacrificial slab is between the channel block and a substrate, wherein the sacrificial slab has a single crystal structure, and wherein the channel block physically bonds to the substrate surface; and
heat treating the channel block and substrate to chemically bond the channel block to the substrate surface.
2 Assignments
0 Petitions
Accused Products
Abstract
A method of forming a strained channel for a field effect transistor, including forming a sacrificial layer on a substrate, forming a channel layer on the sacrificial layer, forming a stressor layer on the channel layer, wherein the stressor layer applies a stress to the channel layer, forming at least one etching trench by removing at least a portion of the stressor layer, channel layer, and sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the sacrificial layer, and separates the stressor layer, channel layer, and sacrificial layer into two or more stressor islands, channel blocks, and sacrificial slabs, and removing the sacrificial slabs to release the channel blocks from the substrate using a selective etch, wherein the channel blocks adhere to the substrate surface.
-
Citations
19 Claims
-
1. A method of forming a strained channel for a field effect transistor, comprising:
-
removing a sacrificial slab from a stack of a channel block on the sacrificial slab, and a stressor island on the channel block, wherein the sacrificial slab is between the channel block and a substrate, wherein the sacrificial slab has a single crystal structure, and wherein the channel block physically bonds to the substrate surface; and heat treating the channel block and substrate to chemically bond the channel block to the substrate surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A method of forming a strained channel, comprising:
-
forming a silicon-germanium sacrificial slab on a substrate surface, a channel block on the sacrificial slab, and a stressor island on the channel block; and removing the silicon-germanium sacrificial slab using a selective etch to release the channel block and stressor island from the substrate, wherein the released channel block physically bonds to the substrate surface. - View Dependent Claims (12, 13, 14, 15)
-
-
16. An intermediate channel structure, comprising;
-
a substrate with a single crystal surface; one or more pillars, where each of the one or more pillars supports a channel block; and a stressor island on each channel block, wherein the stressor island applies a tensile or compressive stress to a top surface of the channel block to induce a strain in the channel block of about 0.5% to about 2%, wherein the stressor island is silicon nitride (SiN). - View Dependent Claims (17, 18, 19)
-
Specification