Light emitting device and manufacturing method therefor

• US 10,361,339 B2
• Filed: 11/12/2015
• Issued: 07/23/2019
• Est. Priority Date: 11/12/2014
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Jung, Jung Whan, Kim, Kyung Hae, Kwak, Woo Chul, Jang, Sam Seok
• Primary Examiner(s): Le, Thao P
• Application Number:
  US15/526,724
• Publication Number:
  US 20180047871A1
• Time in Patent Office: 1,349 Days
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A light emitting device and a manufacturing method therefor are disclosed. The light emitting device comprises: a patterned sapphire substrate (PSS) including a plurality of concave parts and protruding parts on the upper surface thereof; a buffer layer including a concave part buffer layer, which is positioned on the concave part, and a protruding part buffer layer, which is positioned on the side surface of the protruding part and dispersed and arranged in a plurality of island shapes; a lower nitride layer positioned on the buffer layer and the PSS and covering the protruding part; a void positioned on an interface between the side surface of the protruding part and the lower nitride layer; a first conductive type semiconductor layer positioned on the lower nitride layer; a second conductive type semiconductor layer positioned on the first conductive type semiconductor layer; and an active layer interposed between the first and second conductive type semiconductor layers.

Claims

1. A light emitting device comprising:

a patterned sapphire substrate (PSS) having a plurality of depressions and protrusions formed on an upper surface thereof;

a buffer layer comprising a depression buffer layer disposed on the depressions and a protrusion buffer layer disposed on side surfaces of the protrusions and dispersed in the form of plural islands, the protrusion buffer layer including a nitride semiconductor including Aluminum (Al);

a lower nitride layer disposed on the buffer layer and the PSS and covering the protrusions;

vacancies formed at interfaces between the side surfaces of the protrusions and the lower nitride layer, the lower nitride layer including an undoped nitride layer;

a first conductive type semiconductor layer disposed on the lower nitride layer;

a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and

an active layer interposed between the first and second conductive type semiconductor layers.

2. The light emitting device according to claim 1, wherein the buffer layer comprises AlGaN.

3. The light emitting device according to claim 2, wherein AlGaN of the buffer layer has an Al ratio of higher than 0 to 4% or less.

4. The light emitting device according to claim 1, wherein the vacancies are disposed near the protrusion buffer layer dispersed in the form of plural islands.

5. The light emitting device according to claim 1, wherein the lower nitride layer comprises a rough layer formed using the depression buffer layer as a seed;

and a recovery layer disposed on the rough layer.

6. The light emitting device according to claim 1, wherein the vacancies have a size of 50 nm to 300 nm.

7. The light emitting device according to claim 1, wherein the protrusions have a poly-pyramidal shape and a height from 1.6 μ

m to 1.7 μ

m.

8. The light emitting device according to claim 1, wherein the buffer layer and the lower nitride layer have different crystal structures from each other.

9. The light emitting device according to claim 1, wherein the buffer layer includes a polycrystalline layer and the lower nitride layer includes a single crystal layer.