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Ultraviolet light emitting diodes

  • US 10,361,343 B2
  • Filed: 07/02/2015
  • Issued: 07/23/2019
  • Est. Priority Date: 07/02/2014
  • Status: Active Grant
First Claim
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1. A deep ultraviolet light-emitting diode comprising:

  • a base layer including a p-type material forming a first side of the diode;

    an active layer grown on the base layer, whereby radiative recombination of carriers in the active layer produces ultraviolet light in response to an applied electric field;

    a light reflecting layer disposed between the base layer and the active layer, wherein the light reflecting layer reflects the ultraviolet light away from the base layer, andan n-AlGaN layer grown on the active layer, wherein the n-AlGaN is on a second side of the diode which is opposite to the first side, and wherein the active layer is disposed between the base layer and the n-AlGaN layer and wherein the n-AlGaN layer includes a textured surface, whereby ultraviolet light is emitted from the textured surface.

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