Ultraviolet light emitting diodes
First Claim
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1. A deep ultraviolet light-emitting diode comprising:
- a base layer including a p-type material forming a first side of the diode;
an active layer grown on the base layer, whereby radiative recombination of carriers in the active layer produces ultraviolet light in response to an applied electric field;
a light reflecting layer disposed between the base layer and the active layer, wherein the light reflecting layer reflects the ultraviolet light away from the base layer, andan n-AlGaN layer grown on the active layer, wherein the n-AlGaN is on a second side of the diode which is opposite to the first side, and wherein the active layer is disposed between the base layer and the n-AlGaN layer and wherein the n-AlGaN layer includes a textured surface, whereby ultraviolet light is emitted from the textured surface.
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Abstract
The invention provides ultraviolet (UV) light-emitting diodes (LEDs). The UV LEDs can comprise abase layer including p-type SiC or p-type AlGaN, an active layer, and an n-AlGaN layer, wherein the active layer is disposed between the base layer and the n-AlGaN layer. In some embodiments, the absorption losses in p-SiC can be decreased or prevented by incorporating a conductive AlGaN Distributed Bragg Reflector (DBR) between the p-type SiC layer and the active layer. In some embodiments, the n-AlGaN layer can be textured to increase the extraction efficiency (EE). In some embodiments, the external quantum efficiency of the LEDs can be 20-30% or more.
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Citations
19 Claims
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1. A deep ultraviolet light-emitting diode comprising:
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a base layer including a p-type material forming a first side of the diode; an active layer grown on the base layer, whereby radiative recombination of carriers in the active layer produces ultraviolet light in response to an applied electric field; a light reflecting layer disposed between the base layer and the active layer, wherein the light reflecting layer reflects the ultraviolet light away from the base layer, and an n-AlGaN layer grown on the active layer, wherein the n-AlGaN is on a second side of the diode which is opposite to the first side, and wherein the active layer is disposed between the base layer and the n-AlGaN layer and wherein the n-AlGaN layer includes a textured surface, whereby ultraviolet light is emitted from the textured surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification