Transverse bulk acoustic wave filter
First Claim
1. A transverse bulk acoustic wave filter, comprising:
- a piezoelectric filter element having a top side, a bottom side, a left side, and a right side, wherein the right side is opposed to the left side and the bottom side is opposed to the top side;
a top electrode in contact with the top side;
a bottom electrode in contact with the bottom side;
a left acoustic mirror in contact with the left side; and
a right acoustic mirror in contact with the right side,wherein, when a voltage is applied across the top electrode and the bottom electrode, a resonant acoustic wave is formed in the piezoelectric filter element between the left and right acoustic mirrors.
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Accused Products
Abstract
A micro-transfer printable transverse bulk acoustic wave filter comprises a piezoelectric filter element having a top side, a bottom side, a left side, and a right side disposed over a sacrificial portion on a source substrate. A top electrode is in contact with the top side and a bottom electrode is in contact with the bottom side. A left acoustic mirror is in contact with the left side and a right acoustic mirror is in contact with the right side. The thickness of the transverse bulk acoustic wave filter is substantially less than its length or width and its length can be greater than its width. The transverse bulk acoustic wave filter can be disposed on, and electrically connected to, a semiconductor substrate comprising an electronic circuit to control the transverse bulk acoustic wave filter and form a composite heterogeneous device that can be micro-transfer printed.
200 Citations
20 Claims
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1. A transverse bulk acoustic wave filter, comprising:
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a piezoelectric filter element having a top side, a bottom side, a left side, and a right side, wherein the right side is opposed to the left side and the bottom side is opposed to the top side; a top electrode in contact with the top side; a bottom electrode in contact with the bottom side; a left acoustic mirror in contact with the left side; and a right acoustic mirror in contact with the right side, wherein, when a voltage is applied across the top electrode and the bottom electrode, a resonant acoustic wave is formed in the piezoelectric filter element between the left and right acoustic mirrors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A transverse acoustic wave filter wafer, comprising:
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a source wafer comprising substrate material; a patterned sacrificial layer forming sacrificial portions on, over, or in the substrate material, a surface of the substrate material, the source wafer, or a surface of the source wafer, the sacrificial portions defining separate anchors between the sacrificial portions; and a transverse bulk acoustic wave filter disposed entirely over each sacrificial portion, wherein the transverse bulk acoustic wave filter comprises a piezoelectric filter element having a top side, a bottom side, a left side, and a right side, wherein the right side is opposed to the left side and the bottom side is opposed to the top side; a top electrode in contact with the top side;
a bottom electrode in contact with the bottom side;a left acoustic mirror in contact with the left side; and a right acoustic mirror in contact with the right side.
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13. A transverse bulk acoustic wave filter, comprising:
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a piezoelectric filter element having a top side, a bottom side, a left side, and a right side, wherein the right side is opposed to the left side and the bottom side is opposed to the top side; a top electrode in contact with the top side; a bottom electrode in contact with the bottom side; a left acoustic mirror in contact with the left side; a right acoustic mirror in contact with the right side; and a fractured or separated tether.
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14. A transverse bulk acoustic wave filter, comprising:
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a piezoelectric filter element having a top side, a bottom side, a left side, and a right side, wherein the right side is opposed to the left side and the bottom side is opposed to the top side; a top electrode in contact with the top side; a bottom electrode in contact with the bottom side; a left acoustic mirror in contact with the left side; a right acoustic mirror in contact with the right side; and a support substrate comprising top and bottom circuit connection pads and wherein the bottom electrode is adhered to the support substrate, the top circuit connection pad is electrically connected to the top electrode, and the bottom circuit connection pad is electrically connected to the bottom electrode. - View Dependent Claims (15, 16, 17)
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18. A transverse acoustic wave filter wafer, comprising:
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a device wafer comprising substrate material; a patterned sacrificial layer forming sacrificial portions on, over, or in the substrate material, a surface of the substrate material, the device wafer, or a surface of the device wafer, the sacrificial portions defining separate anchors between the sacrificial portions; a transverse bulk acoustic wave filter disposed entirely over each sacrificial portion, the transverse bulk acoustic wave filter comprising a piezoelectric filter element having a top side, a bottom side, a left side, and a right side, wherein the right side is opposed to the left side and the bottom side is opposed to the top side, a top electrode in contact with the top side, a bottom electrode in contact with the bottom side, a left acoustic mirror in contact with the left side, a right acoustic mirror in contact with the right side, and a fractured or separated tether; and an electrical connection electrically connected to the top electrode and an electrical connection electrically connected to the bottom electrode. - View Dependent Claims (19)
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20. A transverse bulk acoustic wave filter, comprising:
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a piezoelectric filter element having a top side, a bottom side, a left side, and a right side, wherein the right side is opposed to the left side and the bottom side is opposed to the top side; a top electrode in contact with the top side; a bottom electrode in contact with the bottom side; a left acoustic mirror in contact with the left side; and a right acoustic mirror in contact with the right side, wherein at least one of the left acoustic mirror and right acoustic mirror comprises a plurality of alternating high-impedance and low-impedance sub-layers.
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Specification