RF sensor in stacked transistors

• US 10,361,696 B1
• Filed: 01/31/2019
• Issued: 07/23/2019
• Est. Priority Date: 02/07/2018
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Schleicher, Bernd, Bakalski, Winfried, Bauder, Ruediger, Solomko, Valentyn
• Primary Examiner(s): Skibinski, Tomi
• Application Number:
  US16/264,186
• Publication Number:
  US 20190245533A1
• Time in Patent Office: 173 Days
• Field of Search: 327382, 455 78, 455 73
• CPC Class Codes: H03K 17/161 in field-effect transistor switches
• CPC Class Codes: H03K 17/6871 the output circuit comprising more than one controlled field-effect transistor
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00

Abstract

An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, a transistor including a first current node coupled to a first load resistor, a second current node coupled to ground, and a control node coupled to an internal switch node, and a filter having an input coupled to the first current node of the first transistor and an output for providing a DC voltage corresponding to the RF power present at the internal switch node.

Claims

1. An RF switch comprising:

a plurality of series-coupled RF switch cells coupled between an RF input and ground;

a plurality of voltage dividers, each of the voltage dividers being coupled to a corresponding one of the RF switch cells; and

a plurality of voltage detectors, each voltage detector having an input coupled to a tap of a corresponding one of the voltage dividers, and an output for providing a DC voltage, a plurality of the DC voltages configured to provide a linearity indication of the RF switch.

2. The RF switch of claim 1, wherein each of the RF switch cells comprises a transistor.

3. The RF switch of claim 2, wherein each of the RF switch cells further comprises a first resistor across the transistor.

4. The RF switch of claim 3, wherein each of the RF switch cells further comprises a second resistor coupled between an input signal source and a control node of the transistor.

5. The RF switch of claim 1, wherein each of the plurality of voltage dividers comprises:

a first resistor coupled between the tap and ground; and

a second resistor coupled between the tap and a corresponding RF switch cell,

wherein each of the first resistors are equal in value, and wherein each of the second resistors are unequal in value.

6. The RF switch of claim 5, wherein the value of the second resistor in the plurality of voltage dividers is scaled according to a switch position of the corresponding RF switch cell associated with the second resistor.

7. The RF switch of claim 6, wherein the value of the second resistor comprises a linearly scaled value component that scales with RF switch position and a constant value component that does not scale with RF switch position.

8. The RF switch of claim 6, wherein the value of the second resistor in a first RF switch position closest to ground comprises a minimum value, and the value of the second resistor in a last RF switch position closest to the RF input comprises a maximum value.

9. The RF switch of claim 1, wherein each voltage detector of the plurality of voltage detectors comprises a filter.

10. The RF switch of claim 1, wherein each voltage detector of the plurality of voltage detectors comprises a rectifier circuit.

11. An RF switch comprising:

a plurality of series-coupled RF switch cells coupled between an RF input and ground;

a plurality of voltage dividers, each of the voltage dividers being coupled across a corresponding one of the RF switch cells; and

a plurality of voltage detectors, each voltage detector having an input coupled to a tap of a corresponding one of the voltage dividers, and an output for providing a DC voltage, a plurality of the DC voltages configured to monitor a plurality of internal voltage conditions of the RF switch.

12. The RF switch of claim 11, wherein at least one of the plurality of voltage dividers comprises a single tap voltage divider.

13. The RF switch of claim 11, wherein at least one of the plurality of voltage dividers comprises a dual tap voltage divider.

14. The RF switch of claim 11, wherein at least one of the plurality of voltage dividers is associated with an RF switch cell having an intermediate RF switch position between a first RF switch position and a last RF switch position.

15. The RF switch of claim 11, further comprising a single resistor coupled across a plurality of the RF switch cells not coupled to a corresponding one of the plurality of voltage dividers.

16. The RF switch of claim 11, wherein each voltage detector of the plurality of voltage detectors comprises a filter.

17. The RF switch of claim 11, wherein each voltage detector of the plurality of voltage detectors comprises a rectifier circuit.

18. An RF switch comprising:

a plurality of series-coupled RF switch cells coupled between an RF input and ground;

a plurality of voltage dividers, each of the voltage dividers being coupled to a corresponding one of the RF switch cells; and

a plurality of voltage detectors, each voltage detector having an input coupled to a tap of a corresponding one of the voltage dividers, and an output for providing a DC voltage.

19. The RF switch of claim 18, wherein each of the plurality of voltage dividers is coupled across the corresponding one of the RF switch cells.

20. The RF switch of claim 18, wherein each of the plurality of voltage dividers is coupled between a drain node of the corresponding one of the RF switch cells and ground.