Electronic component structures with reduced microphonic noise

• US 10,366,836 B2
• Filed: 10/04/2016
• Issued: 07/30/2019
• Est. Priority Date: 05/26/2010
• Status: Active Grant

• Current Assignee: Kemet Electronics Corporation (Yageo Corporation)
• Original Assignee: Kemet Electronics Corporation (Yageo Corporation)
• Inventors: Bultitude, John, McConnell, John E., Miller, Galen W.
• Primary Examiner(s): Tso, Stanley
• Application Number:
  US15/285,210
• Publication Number:
  US 20170025223A1
• Time in Patent Office: 1,029 Days
• Field of Search: 174260
• CPC Class Codes: B23K 1/0016 Brazing of electronic components
• CPC Class Codes: B23K 1/0053 soldering by means of I.R.
• CPC Class Codes: B23K 1/008 Soldering within a furnace B23K1/012 takes precedence
• CPC Class Codes: B23K 1/203 Fluxing, i.e. applying flux onto surfaces
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: B23K 2101/42 Printed circuits
• CPC Class Codes: B23K 35/0227 Rods, wires B23K35/0244 takes precedence
• CPC Class Codes: B23K 35/3613 Polymers, e.g. resins
• CPC Class Codes: H01G 4/0085 Fried electrodes
• CPC Class Codes: H01G 4/12 Ceramic dielectrics H01G4/085 takes precedence
• CPC Class Codes: H01G 4/232 electrically connecting two or more layers of a stacked or rolled capacitor
• CPC Class Codes: H01G 4/2325 characterised by the material of the terminals
• CPC Class Codes: H01G 4/30 Stacked capacitors H01G4/33 takes precedence
• CPC Class Codes: H01G 4/38 Multiple capacitors, i.e. structural combinations of fixed capacitors
• CPC Class Codes: H01L 2224/83825 Solid-liquid interdiffusion
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00015 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: Y10T 29/435 : Solid dielectric type

Abstract

An electronic device is described wherein the electronic device comprises a substrate with a first conductive metal layer and a second conductive metal layer. A first microphonic noise reduction structure is in electrical contact with the first conductive metal layer wherein the first microphonic noise reduction layer comprises at least one of the group consisting of a compliant non-metallic layer and a shock absorbing conductor comprising offset mounting tabs with a space there between coupled with at least one stress relieving portion. An electronic component comprising a first external termination of a first polarity and a second external termination of a second polarity is integral to the electronic device and the first microphonic noise reduction structure and the first external termination are adhesively bonded by a transient liquid phase sintering adhesive.

Claims

1. An electronic structure comprising:

a first conductive metal layer and a second conductive metal layer;

a first compliant non-metallic layer on said first conductive metal layer wherein said first compliant non-metallic layer comprises a gap wherein said gap is a via through said first compliant non-metallic layer and said gap is smaller than said first conductive metal layer;

an electronic component comprising a first external termination of a first polarity and a second external termination of a second polarity wherein said gap is smaller than said first external termination;

a transient liquid phase sintering adhesive in electrical contact with said first external termination and said first conductive metal layer wherein said transient liquid phase sintering adhesive extends through said gap;

wherein said electronic component is a multilayered ceramic capacitor comprising at least one floating electrode wherein said floating electrode is selected from the group consisting of an external floating electrode coplanar with at least one first electrode of said first electrodes and an internal floating electrode coplanar with at least one first electrode of said first electrodes; and

wherein said multilayered ceramic capacitor further comprises a shock absorbing conductor wherein said shock absorbing conductor has a shape selected from S shaped, and Z shaped.

2. The electronic structure of claim 1 wherein said first compliant non-metallic layer comprises a material selected from the group consisting of FR4, perflouroelastomers, polyimide, kapton, peek and electronic grade ceramic.

3. The electronic structure of claim 1 wherein said first compliant non-metallic layer comprises strips with said gap between said strips.

4. The electronic structure of claim 1 wherein said first compliant non-metallic layer has a thickness of at least 25 μ

m to no more than 1.575 mm.

5. The electronic structure of claim 1 further comprising a second compliant non-metallic layer wherein said second compliant non-metallic layer comprises a second gap and a second conductive adhesive is in electrical contact with said first external termination and a second conductive layer through said second gap.

6. The electronic structure of claim 1 wherein said transient liquid phase sintering conductive layer comprises at least one low melting point metal selected from indium, tin, antimony, bismuth, cadmium, zinc, gallium, tellurium, mercury, thallium, selenium, or polonium, lead.

7. The electronic structure of claim 1 wherein said transient liquid phase sintering adhesive comprises a high temperature metal selected from the group consisting of silver, copper, aluminum, gold, platinum, palladium, beryllium, rhodium, nickel, cobalt, iron and molybdenum.

8. The electronic structure of claim 1 wherein said transient liquid phase sintering adhesive further comprises a non-metallic filler.

9. The electronic structure of claim 8 wherein said non-metallic filler is glass frit.

10. The electronic structure of claim 1 wherein said first conductive metal layer comprises a metal selected from the group consisting of Ni, Ag, Sn, Au, Cu, Al and SnPb.

11. The electronic structure of claim 1 wherein said first conductive metal layer comprises nickel plated with an element selected from the group consisting of Ag, Sn, Au or SnPb.

12. The electronic structure of claim 1 wherein said first external termination comprises nickel plated with an element selected from the group consisting of Ag, Sn, Au or SnPb.

13. The electronic structure of claim 1 further comprising at least one second electronic component wherein said second electronic component comprises a first stacked external termination in electrical contact with said first external termination and a second stacked external termination in electrical contact with said first external termination.

14. The electronic structure of claim 13 wherein said first stacked external termination is electrically connected to said first external termination by a transient liquid phase sintering conductive layer.

15. The electronic structure of claim 13 comprising up to 50 second electronic components in a stack.

16. The electronic structure of claim 1 wherein said first conductive metal layer is on a substrate.

17. The electronic structure of claim 16 wherein said second conductive metal layer is on a second substrate.

18. The electronic structure of claim 17 wherein said substrate and said second substrate are strips.

19. The electronic structure of claim 16 wherein said substrate further comprises at least one trace in electrical contact with said first conductive metal layer.

20. The electronic structure of claim 19 wherein said substrate further comprises at least one solder pad in electrical contact with at least one said trace.

21. The electronic structure of claim 20 wherein said at least one solder pad is on an opposite side of said substrate from said first conductive metal layer.

22. The electronic structure of claim 20 wherein said at least one solder pad is in electrical contact with at least one said trace through the via.

23. The electronic structure of claim 16 wherein said substrate further comprises an elastomeric coating.

24. The electronic structure of claim 23 wherein said elastomeric coating is on an opposite side of said substrate than said first conductive metal layer.

25. The electronic structure of claim 16 wherein said substrate further comprises at least one mechanical solder pad which is not electrically connected.

26. The electronic structure of claim 1 wherein said shock absorbing conductor has a height of at least 0.0254 mm to no more than 0.127 mm.

27. The electronic structure of claim 1 wherein said shock absorbing conductor further comprises a preform or filler within an interstitial area.

28. The electronic structure of claim 1 wherein said shock absorbing conductor comprises a material selected from the group consisting of ferrous and non-ferrous electrically conductive materials and alloys.

29. The electronic structure of claim 28 wherein said shock absorbing conductor comprises a material selected from the group consisting of Alloy 42, Kovar, Invar, Phosphor Bronze and Cu.

30. An electronic device comprising said electronic structure of claim 1.