Gas distribution system for ceramic showerhead of plasma etch reactor
First Claim
1. A gas delivery ring configured to supply process gas to an outer periphery of a showerhead of a plasma processing apparatus wherein a semiconductor substrate supported on a substrate support is subjected to plasma processing, the gas delivery ring comprising:
- a gas ring having a single gas inlet, a plurality of channels, and a plurality of gas outlets in fluid communication with the gas inlet via the channels;
the channels including a first channel connected to the gas inlet at a midpoint thereof with downstream ends of the first channel equidistant from the gas inlet and from each other, two second channels connected at midpoints thereof to the downstream ends of the first channel with downstream ends of the second channels equidistant from the downstream ends of the first channel and from each other, and four third channels connected at midpoints thereof to downstream ends of the second channels with downstream ends of the third channels connected to the gas outlets; and
a bottom ring and cover ring, the channels extending into an upper surface of the bottom ring and enclosed by the cover ring,wherein an upper surface of the gas delivery ring includes mounting surfaces having mounting holes therein configured to receive fasteners of gas connection blocks which attach the gas delivery ring to the outer periphery of the showerhead, and wherein the channels are disposed within the same plane.
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Accused Products
Abstract
A gas delivery system for a ceramic showerhead includes gas connection blocks and a gas ring, the gas connection blocks mounted on the gas ring such that gas outlets in the blocks deliver process gas to gas inlets in an outer periphery of the showerhead. The gas ring includes a bottom ring with channels therein and a welded cover plate enclosing the channels. The gas ring can include a first channel extending ½ the length of the gas ring, two second channels connected at midpoints thereof to downstream ends of the first channel, and four third channels connected at midpoints thereof to downstream ends of the second channels. the cover plate can include a first section enclosing the first channel, two second sections connected at midpoints thereof to ends of the first section, and third sections connected at midpoints thereof to ends of the second sections. The channels are arranged such that the process gas travels equal distances for a single gas inlet in the gas ring to eight outlets in the cover ring allowing equal gas flow.
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Citations
8 Claims
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1. A gas delivery ring configured to supply process gas to an outer periphery of a showerhead of a plasma processing apparatus wherein a semiconductor substrate supported on a substrate support is subjected to plasma processing, the gas delivery ring comprising:
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a gas ring having a single gas inlet, a plurality of channels, and a plurality of gas outlets in fluid communication with the gas inlet via the channels; the channels including a first channel connected to the gas inlet at a midpoint thereof with downstream ends of the first channel equidistant from the gas inlet and from each other, two second channels connected at midpoints thereof to the downstream ends of the first channel with downstream ends of the second channels equidistant from the downstream ends of the first channel and from each other, and four third channels connected at midpoints thereof to downstream ends of the second channels with downstream ends of the third channels connected to the gas outlets; and a bottom ring and cover ring, the channels extending into an upper surface of the bottom ring and enclosed by the cover ring, wherein an upper surface of the gas delivery ring includes mounting surfaces having mounting holes therein configured to receive fasteners of gas connection blocks which attach the gas delivery ring to the outer periphery of the showerhead, and wherein the channels are disposed within the same plane. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification