Display Device
First Claim
1. A semiconductor device comprising:
- a pixel portion;
a protective circuit comprising a first transistor and a second transistor, each of the first transistor and the second transistor comprising;
a gate electrode;
a gate insulating layer over the gate electrode;
a first oxide semiconductor layer over the gate insulating layer;
a first electrode and a second electrode over the first oxide semiconductor layer; and
a second oxide semiconductor layer provided between the first oxide semiconductor layer and the first electrode;
a first wiring electrically connected to the first electrode of the first transistor, the gate electrode of the first transistor, and the first electrode of the second transistor; and
a second wiring electrically connected to the second electrode of the first transistor, the gate electrode of the second transistor, and the second electrode of the second transistor,wherein the pixel portion is electrically connected to the protective circuit, andwherein the first oxide semiconductor layer comprises indium, gallium, and zinc.
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Accused Products
Abstract
A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.
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Citations
31 Claims
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1. A semiconductor device comprising:
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a pixel portion; a protective circuit comprising a first transistor and a second transistor, each of the first transistor and the second transistor comprising; a gate electrode; a gate insulating layer over the gate electrode; a first oxide semiconductor layer over the gate insulating layer; a first electrode and a second electrode over the first oxide semiconductor layer; and a second oxide semiconductor layer provided between the first oxide semiconductor layer and the first electrode; a first wiring electrically connected to the first electrode of the first transistor, the gate electrode of the first transistor, and the first electrode of the second transistor; and a second wiring electrically connected to the second electrode of the first transistor, the gate electrode of the second transistor, and the second electrode of the second transistor, wherein the pixel portion is electrically connected to the protective circuit, and wherein the first oxide semiconductor layer comprises indium, gallium, and zinc. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a pixel portion; a protective circuit comprising a first transistor and a second transistor, each of the first transistor and the second transistor comprising; a gate electrode; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate insulating layer; and a first electrode and a second electrode over the oxide semiconductor layer; a first wiring electrically connected to the first electrode of the first transistor, the gate electrode of the first transistor, and the first electrode of the second transistor; and a second wiring electrically connected to the second electrode of the first transistor, the gate electrode of the second transistor, and the second electrode of the second transistor, wherein the pixel portion is electrically connected to the protective circuit, wherein the oxide semiconductor layer comprises indium, gallium, and zinc, wherein the oxide semiconductor layer comprises a first region overlapping with the gate electrode and a second region overlapping with the first electrode, wherein the first region does not overlap the first electrode, wherein the first region does not overlap the second electrode, and wherein a thickness of the first region is smaller than a thickness of the second region. - View Dependent Claims (9, 10, 11, 12)
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13. A semiconductor device comprising:
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a pixel portion; a protective circuit comprising a first transistor and a second transistor, each of the first transistor and the second transistor comprising; a gate electrode; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate insulating layer; and a first electrode and a second electrode over the oxide semiconductor layer; a first wiring electrically connected to the first electrode of the first transistor, the gate electrode of the first transistor, and the first electrode of the second transistor; and a second wiring electrically connected to the second electrode of the first transistor, the gate electrode of the second transistor, and the second electrode of the second transistor, wherein the pixel portion is electrically connected to the protective circuit, wherein the oxide semiconductor layer comprises indium, gallium, and zinc, wherein the gate electrode of the first transistor is formed with the same layer as the first wiring, wherein the first electrode of the first transistor and the first electrode of the second transistor are formed of a conductive layer, and wherein the conductive layer comprises titanium. - View Dependent Claims (14, 15, 16)
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17. A semiconductor device comprising:
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a pixel portion; a protective circuit comprising a first transistor and a second transistor, each of the first transistor and the second transistor comprising; a gate electrode; a gate insulating layer over the gate electrode; a first oxide semiconductor layer over the gate insulating layer; a first electrode and a second electrode over the first oxide semiconductor layer; and a second oxide semiconductor layer provided between the first oxide semiconductor layer and the first electrode; a first wiring electrically connected to the first electrode of the first transistor, the gate electrode of the first transistor, and the first electrode of the second transistor; and a second wiring electrically connected to the second electrode of the first transistor, the gate electrode of the second transistor, and the second electrode of the second transistor, wherein the pixel portion is electrically connected to the protective circuit, wherein the first oxide semiconductor layer comprises indium, gallium, and zinc, and wherein an oxygen concentration of the first oxide semiconductor layer is different from an oxygen concentration of the second oxide semiconductor layer. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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25. A semiconductor device comprising:
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a pixel portion; a protective circuit comprising a first transistor, a second transistor, a third transistor, and a fourth transistor, each of the first transistor, the second transistor, the third transistor, and the fourth transistor comprising; a gate electrode; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate insulating layer; and a first electrode and a second electrode over the oxide semiconductor layer; a first wiring electrically connected to the first electrode of the first transistor, the gate electrode of the first transistor, and the first electrode of the second transistor; and a second wiring electrically connected to the second electrode of the first transistor, the gate electrode of the second transistor, and the second electrode of the second transistor, wherein the first electrode of the third transistor and the first electrode of the fourth transistor are electrically connected to the gate electrode of the third transistor, wherein the second electrode of the third transistor and the second electrode of the fourth transistor, and the gate electrode of the fourth transistor are electrically connected to the second wiring, wherein the pixel portion is electrically connected to the protective circuit, and wherein the oxide semiconductor layer comprises indium, gallium, and zinc. - View Dependent Claims (26, 27, 28, 29, 30, 31)
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Specification