Display Device

• US 10,367,006 B2
• Filed: 02/09/2017
• Issued: 07/30/2019
• Est. Priority Date: 10/03/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Akimoto, Kengo, Komori, Shigeki, Uochi, Hideki, Futamura, Tomoya, Kasahara, Takahiro
• Primary Examiner(s): Sun, Yu-Hsi D
• Application Number:
  US15/428,340
• Publication Number:
  US 20170243897A1
• Time in Patent Office: 901 Days
• Field of Search: None
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/1054 with a variation of the composition, e.g. channel with strained layer for increasing the mobility
• CPC Class Codes: H01L 29/20 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.

Claims

1. A semiconductor device comprising:

a pixel portion;

a protective circuit comprising a first transistor and a second transistor, each of the first transistor and the second transistor comprising;

a gate electrode;

a gate insulating layer over the gate electrode;

a first oxide semiconductor layer over the gate insulating layer;

a first electrode and a second electrode over the first oxide semiconductor layer; and

a second oxide semiconductor layer provided between the first oxide semiconductor layer and the first electrode;

a first wiring electrically connected to the first electrode of the first transistor, the gate electrode of the first transistor, and the first electrode of the second transistor; and

a second wiring electrically connected to the second electrode of the first transistor, the gate electrode of the second transistor, and the second electrode of the second transistor,

wherein the pixel portion is electrically connected to the protective circuit, and

wherein the first oxide semiconductor layer comprises indium, gallium, and zinc.

2. The semiconductor device according to claim 1,

wherein the first wiring is a scan line, and

wherein the second wiring is a common wiring.

3. The semiconductor device according to claim 1, wherein one of the first electrode and the second electrode is a source electrode.

4. The semiconductor device according to claim 1, wherein a third oxide semiconductor layer is provided between the first oxide semiconductor layer and the second electrode.

5. The semiconductor device according to claim 1, wherein the first electrode of the first transistor and the first electrode of the second transistor are formed from one layer.

6. The semiconductor device according to claim 1, wherein the second electrode of the first transistor and the second electrode of the second transistor are formed with the same layer as the second wiring.

7. The semiconductor device according to claim 1, wherein the second oxide semiconductor layer has higher electrical conductivity than the first oxide semiconductor layer.

8. A semiconductor device comprising:

a pixel portion;

a protective circuit comprising a first transistor and a second transistor, each of the first transistor and the second transistor comprising;

a gate electrode;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer; and

a first electrode and a second electrode over the oxide semiconductor layer;

a first wiring electrically connected to the first electrode of the first transistor, the gate electrode of the first transistor, and the first electrode of the second transistor; and

a second wiring electrically connected to the second electrode of the first transistor, the gate electrode of the second transistor, and the second electrode of the second transistor,

wherein the pixel portion is electrically connected to the protective circuit,

wherein the oxide semiconductor layer comprises indium, gallium, and zinc,

wherein the oxide semiconductor layer comprises a first region overlapping with the gate electrode and a second region overlapping with the first electrode,

wherein the first region does not overlap the first electrode,

wherein the first region does not overlap the second electrode, and

wherein a thickness of the first region is smaller than a thickness of the second region.

9. The semiconductor device according to claim 8,

wherein the first wiring is a scan line, and

wherein the second wiring is a common wiring.

10. The semiconductor device according to claim 8, wherein one of the first electrode and the second electrode is a source electrode.

11. The semiconductor device according to claim 8, wherein the first electrode of the first transistor and the first electrode of the second transistor are formed from one layer.

12. The semiconductor device according to claim 8, wherein the second electrode of the first transistor and the second electrode of the second transistor are formed with the same layer as the second wiring.

13. A semiconductor device comprising:

a pixel portion;

a protective circuit comprising a first transistor and a second transistor, each of the first transistor and the second transistor comprising;

a gate electrode;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer; and

a first electrode and a second electrode over the oxide semiconductor layer;

a first wiring electrically connected to the first electrode of the first transistor, the gate electrode of the first transistor, and the first electrode of the second transistor; and

a second wiring electrically connected to the second electrode of the first transistor, the gate electrode of the second transistor, and the second electrode of the second transistor,

wherein the pixel portion is electrically connected to the protective circuit,

wherein the oxide semiconductor layer comprises indium, gallium, and zinc,

wherein the gate electrode of the first transistor is formed with the same layer as the first wiring,

wherein the first electrode of the first transistor and the first electrode of the second transistor are formed of a conductive layer, and

wherein the conductive layer comprises titanium.

14. The semiconductor device according to claim 13,

wherein the first wiring is a scan line, and

wherein the second wiring is a common wiring.

15. The semiconductor device according to claim 13, wherein one of the first electrode and the second electrode is a source electrode.

16. The semiconductor device according to claim 13, wherein the second electrode of the first transistor and the second electrode of the second transistor are formed with the same layer as the second wiring.

17. A semiconductor device comprising:

a pixel portion;

a protective circuit comprising a first transistor and a second transistor, each of the first transistor and the second transistor comprising;

a gate electrode;

a gate insulating layer over the gate electrode;

a first oxide semiconductor layer over the gate insulating layer;

a first electrode and a second electrode over the first oxide semiconductor layer; and

a second oxide semiconductor layer provided between the first oxide semiconductor layer and the first electrode;

a first wiring electrically connected to the first electrode of the first transistor, the gate electrode of the first transistor, and the first electrode of the second transistor; and

a second wiring electrically connected to the second electrode of the first transistor, the gate electrode of the second transistor, and the second electrode of the second transistor,

wherein the pixel portion is electrically connected to the protective circuit,

wherein the first oxide semiconductor layer comprises indium, gallium, and zinc, and

wherein an oxygen concentration of the first oxide semiconductor layer is different from an oxygen concentration of the second oxide semiconductor layer.

18. The semiconductor device according to claim 17,

wherein the first wiring is a scan line, and

wherein the second wiring is a common wiring.

19. The semiconductor device according to claim 17, wherein one of the first electrode and the second electrode is a source electrode.

20. The semiconductor device according to claim 17, wherein a third oxide semiconductor layer is provided between the first oxide semiconductor layer and the second electrode.

21. The semiconductor device according to claim 17, wherein the oxygen concentration of the first oxide semiconductor layer is higher than the oxygen concentration of the second oxide semiconductor layer.

22. The semiconductor device according to claim 17, wherein the first electrode of the first transistor and the first electrode of the second transistor are formed from one layer.

23. The semiconductor device according to claim 17, wherein the second electrode of the first transistor and the second electrode of the second transistor are formed with the same layer as the second wiring.

24. The semiconductor device according to claim 17, wherein the second oxide semiconductor layer has higher electrical conductivity than the first oxide semiconductor layer.

25. A semiconductor device comprising:

a pixel portion;

a protective circuit comprising a first transistor, a second transistor, a third transistor, and a fourth transistor, each of the first transistor, the second transistor, the third transistor, and the fourth transistor comprising;

a gate electrode;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer; and

a first electrode and a second electrode over the oxide semiconductor layer;

a first wiring electrically connected to the first electrode of the first transistor, the gate electrode of the first transistor, and the first electrode of the second transistor; and

a second wiring electrically connected to the second electrode of the first transistor, the gate electrode of the second transistor, and the second electrode of the second transistor,

wherein the first electrode of the third transistor and the first electrode of the fourth transistor are electrically connected to the gate electrode of the third transistor,

wherein the second electrode of the third transistor and the second electrode of the fourth transistor, and the gate electrode of the fourth transistor are electrically connected to the second wiring,

wherein the pixel portion is electrically connected to the protective circuit, and

wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

26. The semiconductor device according to claim 25,

wherein the first wiring is a scan line, and

wherein the second wiring is a common wiring.

27. The semiconductor device according to claim 25, wherein one of the first electrode and the second electrode is a source electrode.

28. The semiconductor device according to claim 25, wherein the first electrode of the first transistor is formed with the same layer as the first electrode of the second transistor.

29. The semiconductor device according to claim 25, wherein the first electrode of the third transistor is formed with the same layer as the first electrode of the fourth transistor.

30. The semiconductor device according to claim 25, wherein the second electrode of the first transistor and the second electrode of the second transistor are formed with the same layer as the second wiring.

31. The semiconductor device according to claim 25, wherein the second electrode of the third transistor and the second electrode of the fourth transistor are formed with the same layer as the second wiring.