IGBT with waved floating P-Well electron injection
First Claim
1. An Insulated Gate Bipolar Transistor (IGBT) die structure comprising:
- a P type collector layer;
an N−
type drift layer disposed over the P type collector layer;
a P type body region that extends into the N−
type drift layer;
an N+ type emitter region, wherein the N+ type emitter region extends into the P type body region from an upper semiconductor surface;
a floating P type well region that extends into the N−
type drift layer from the upper semiconductor surface and that is laterally separated from the P type body region, wherein the floating P type well region forms a waved bottom interface with the underlying N−
type drift layer, and wherein the floating P type well region has a thinner portion disposed between two of a plurality of thicker portions;
a floating N+ type well region that extends into the floating P type well region from the upper semiconductor surface, wherein the floating N+ type well region extends over the thinner portion;
a gate disposed above a channel, wherein the channel extends from the N+ type emitter region, across a part of the P type body region, across a portion of the N−
type drift layer, and across a part of the floating P type well region, to the floating N+ type well region, wherein in an IGBT transistor on state electrons flow in a current path from the N+ type emitter region, through the channel and into the floating N+ type well region, to the thinner portion and then down into the N−
type drift layer;
a first metal terminal, wherein the first metal terminal is coupled to the P type body region and to the N+ type emitter region;
a second metal terminal, wherein the second metal terminal is coupled to the gate; and
a third metal terminal that is coupled to the P type collector layer.
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Accused Products
Abstract
An IGBT includes a floating P well and a floating N+ well that extends down into the floating P well. A bottom surface of the floating P well has a waved contour with thinner portions and thicker portions. When the device is on, electrons flow laterally from an N+ emitter and through a channel region. Some electrons pass downward, but others pass laterally through the floating N+ well to one of the thinner portions of the floating P type well. The electrons then pass down from the thinner portions into the N− drift layer. Other electrons pass farther through the floating N+ well to subsequent, thinner electron injector portions of the floating P type well and then into the N− drift layer. The extra electron injection afforded by the waved floating well structure reduces VCE(SAT). The waved contour is made without adding any masking step to the IGBT manufacturing process.
41 Citations
20 Claims
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1. An Insulated Gate Bipolar Transistor (IGBT) die structure comprising:
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a P type collector layer; an N−
type drift layer disposed over the P type collector layer;a P type body region that extends into the N−
type drift layer;an N+ type emitter region, wherein the N+ type emitter region extends into the P type body region from an upper semiconductor surface; a floating P type well region that extends into the N−
type drift layer from the upper semiconductor surface and that is laterally separated from the P type body region, wherein the floating P type well region forms a waved bottom interface with the underlying N−
type drift layer, and wherein the floating P type well region has a thinner portion disposed between two of a plurality of thicker portions;a floating N+ type well region that extends into the floating P type well region from the upper semiconductor surface, wherein the floating N+ type well region extends over the thinner portion; a gate disposed above a channel, wherein the channel extends from the N+ type emitter region, across a part of the P type body region, across a portion of the N−
type drift layer, and across a part of the floating P type well region, to the floating N+ type well region, wherein in an IGBT transistor on state electrons flow in a current path from the N+ type emitter region, through the channel and into the floating N+ type well region, to the thinner portion and then down into the N−
type drift layer;a first metal terminal, wherein the first metal terminal is coupled to the P type body region and to the N+ type emitter region; a second metal terminal, wherein the second metal terminal is coupled to the gate; and a third metal terminal that is coupled to the P type collector layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 10, 11)
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8. An Insulated Gate Bipolar Transistor (IGBT) die structure comprising:
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a P type collector layer; an N−
type drift layer disposed over the P type collector layer;a P type body region that extends into the N−
type drift layer;an N+ type emitter region, wherein the N+ type emitter region extends into the P type body region from an upper semiconductor surface; a floating P type well region that extends into the N−
type drift layer from the upper semiconductor surface and that is laterally separated from the P type body region, wherein the floating P type well region forms a waved bottom interface with the underlying N−
type drift layer, wherein the floating P type well region has a thinner portion and a plurality of thicker portions, and wherein the floating P type well region has a substantially octagonal outer periphery when the IGBT die structure is considered from the top-down perspective;a floating N+ type well region that extends into the floating P type well region from the upper semiconductor surface, wherein the floating N+ type well region extends over the thinner portion, and wherein the floating P type well region surrounds a substantially octagonal area of the floating N+ type well region; a gate disposed above a channel, wherein the channel extends from the N+ type emitter region, across a part of the P type body region, across a portion of the N−
type drift layer, and across a part of the floating P type well region, to the floating N+ type well region, wherein in an IGBT transistor on state electrons flow in a current path from the N+ type emitter region, through the channel and into the floating N+ type well region, to the thinner portion and then down into the N−
type drift layer;a first metal terminal, wherein the first metal terminal is coupled to the P type body region and to the N+ type emitter region; a second metal terminal, wherein the second metal terminal is coupled to the gate; and a third metal terminal that is coupled to the P type collector layer. - View Dependent Claims (9)
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12. A semiconductor device comprising:
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a P type collector layer; an N−
type drift layer disposed over the P type collector layer;a P type body region that extends into the N−
type drift layer;an N+ type emitter region, wherein the N+ type emitter region extends into the P type body region from an upper semiconductor surface; a floating P type well region that extends into the semiconductor device from the upper semiconductor surface and that is laterally separated from the P type body region, wherein the floating P type well region has a concentric thinner portion between concentric thicker portions; a floating N+ type well region that extends into the floating P type well region from the upper semiconductor surface; a gate that extends over a channel, wherein the channel extends from the N+ type emitter region and to the floating N+ type well region, wherein in a device on state electrons flow from the N+ type emitter region, through the channel, into the floating N+ type well region, to the thinner portion and then down into the N−
type drift layer;a first metal terminal coupled to the P type body region and to the N+ type emitter region; a second metal terminal coupled to the gate; and a third metal terminal coupled to the P type collector layer. - View Dependent Claims (13, 14, 15)
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16. An Insulated Gate Bipolar Transistor (IGBT) die structure comprising:
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a P type collector layer; an N−
type drift layer disposed over the P type collector layer;a P type body region that extends into the N−
type drift layer;an N+ type emitter region, wherein the N+ type emitter region extends into the P type body region; a floating P type well region that extends into the N−
type drift layer, wherein the floating P type well region is laterally separated from the P type body region, wherein the floating P type well region has a plurality of concentric thicker bands, and wherein thinner rings are disposed between the thicker bands;a floating N+ type well region that extends into the floating P type well region; a gate that extends over a channel, wherein the channel extends from the N+ type emitter region, across a first part of the P type body region, across a part of the N−
type drift layer, across a part of the floating P type well region, and to the floating N+ type well region, and wherein the gate has a ring shape;a first metal terminal, wherein the first metal terminal is coupled to the P type body region and to the N+ type emitter region; a second metal terminal, wherein the second metal terminal is coupled to the gate; and a third metal terminal that is coupled to the P type collector layer. - View Dependent Claims (17, 18, 19, 20)
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Specification