Light-emitting diode
First Claim
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1. A light-emitting diode, comprising:
- an active layer;
an upper semiconductor stack on the active layer and comprising a window layer; and
a lower semiconductor stack below the active layer and comprising multiple semiconductor layers which combined have a thickness smaller than or equal to 1 μ
m,wherein the multiple semiconductor layers comprise a confining layer below the active layer, a cladding layer below the confining layer, a buffer layer below the cladding layer and a lower contact layer below the cladding layer.
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Abstract
A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 μm, and the thickness of the lower semiconductor stack is small than or equal to 1 μm.
27 Citations
20 Claims
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1. A light-emitting diode, comprising:
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an active layer; an upper semiconductor stack on the active layer and comprising a window layer; and a lower semiconductor stack below the active layer and comprising multiple semiconductor layers which combined have a thickness smaller than or equal to 1 μ
m,wherein the multiple semiconductor layers comprise a confining layer below the active layer, a cladding layer below the confining layer, a buffer layer below the cladding layer and a lower contact layer below the cladding layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification