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Light-emitting diode

  • US 10,367,118 B2
  • Filed: 09/15/2016
  • Issued: 07/30/2019
  • Est. Priority Date: 02/18/2015
  • Status: Active Grant
First Claim
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1. A light-emitting diode, comprising:

  • an active layer;

    an upper semiconductor stack on the active layer and comprising a window layer; and

    a lower semiconductor stack below the active layer and comprising multiple semiconductor layers which combined have a thickness smaller than or equal to 1 μ

    m,wherein the multiple semiconductor layers comprise a confining layer below the active layer, a cladding layer below the confining layer, a buffer layer below the cladding layer and a lower contact layer below the cladding layer.

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