Magnetic tunnel junction device

• US 10,367,138 B2
• Filed: 02/09/2017
• Issued: 07/30/2019
• Est. Priority Date: 03/12/2004
• Status: Active Grant

• Current Assignee: Godo Kaisha IP Bridge 1 (IP Bridge, Inc.)
• Original Assignee: Japan Science & Technology Trading Co. Limited
• Inventors: Yuasa, Shinji
• Primary Examiner(s): Chambliss, Alonzo
• Application Number:
  US15/428,842
• Publication Number:
  US 20170155042A1
• Time in Patent Office: 901 Days
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11C 11/15 using multiple magnetic layers G11C11/155 takes precedence
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H01F 10/132 containing cobalt
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: H10B 53/30 characterised by the memory core region
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

Claims

1. A magnetic tunnel junction (MTJ) device, comprising:

a first electrode comprising a first ferromagnetic material layer that includes Co, Fe, and B;

a barrier layer disposed over the first electrode, the barrier layer comprising a magnesium oxide (MgO) layer that is formed of a poly-crystalline MgO in which a (001) crystal plane is preferentially oriented; and

a second electrode disposed over the barrier layer and comprising a second ferromagnetic material layer that includes Co, Fe, and B, and

wherein each of the first and second ferromagnetic material layers is entirely crystallized,. and

wherein a value of x in MgOx for the MgO layer is greater than 0 and less than 1.

2. The MTJ device of claim 1, wherein the first ferromagnetic material layer is in direct contact with the barrier layer, and wherein the second ferromagnetic material layer is in direct contact with the barrier layer.

3. The MTJ device of claim 1, wherein the first ferromagnetic material layer is in direct contact with the MgO layer, and wherein the second ferromagnetic material layer is in direct contact with the MgO layer.

4. The MTJ device of claim 1, wherein a barrier height ϕ

of the barrier layer is in a range of 0.2 to 0.5 eV.

5. The MTJ device of claim 4, wherein the barrier height ϕ

of the barrier layer is obtained by fitting J-V characteristics of the MTJ device to an equation (1);

J=[(2mϕ

)^1/2/Δ

s](e/h)²×

exp[−

(4π

Δ

s/h)×

(2mϕ

)^1/2]×

V 

 

(1)

where J is a tunnel current density flowing through the barrier layer, V is an applied bias voltage that is 100 mV or smaller, m is the free electron mass, e is the elementary electric charge, h is Planck'"'"'s constant, Δ

s is an effective thickness of the barrier layer that is equivalent to (t_MgO−

0.5 nm), and t_MgO is an actual thickness of the barrier layer.

6. The MTJ device of claim 1, wherein a value of x in MgO_x for the MgO layer is greater than 0.9 and less than 1.

7. A magnetic tunnel junction (MTJ) device, comprising:

a first electrode made of a first CoFeB layer;

a barrier layer made of a magnesium oxide (MgO) layer that is a poly-crystalline layer in which a (001) crystal plane is preferentially oriented; and

a second electrode made of a second CoFeB layer, and

wherein the barrier layer is located between the first electrode and the second electrode, and

wherein both the first and second CoFeB layers are entirely crystallized, and

wherein a value of x in MgO_x for the MgO layer is greater than 0 and less than 1.

8. The MTJ device of claim 7, wherein the first CoFeB layer is in direct contact with the MgO layer, and wherein the second CoFeB layer is in direct contact with the MgO layer.

9. The MTJ device of claim 7, wherein the MgO layer and the first CoFeB layer form a first interface of the MTJ, and wherein the MgO layer and the second CoFeB layer form a second interface of the MTJ.

10. The MTJ device of claim 7, wherein a barrier height ϕ

of the MgO layer is in a range of 0.2 to 0.5 eV.

11. The MTJ device of claim 10, wherein the barrier height ϕ

of the MgO layer is obtained by fitting J-V characteristics of the MTJ device to an equation (1);

J=[(2mϕ

)^1/2/Δ

s](e/h)²×

exp[−

(4π

Δ

s/h)×

(2mϕ

)^1/2]×

V 

 

(1)

where J is a tunnel current density flowing through the MgO layer, V is an applied bias voltage that is 100 mV or smaller, m is the free electron mass, e is the elementary electric charge, h is Planck'"'"'s constant, Δ

s is an effective thickness of the MgO layer that is equivalent to (t_MgO−

0.5 nm), and t_MgO is an actual thickness of the MgO layer.

12. A magnetic tunnel junction (MTJ) device, comprising:

a first ferromagnetic material layer that includes Co, Fe, and B;

a barrier layer disposed on the first ferromagnetic material layer, the barrier layer comprising a magnesium oxide (MgO) layer that is a poly-crystalline MgO in which (001) crystal plane is preferentially oriented; and

a second ferromagnetic material layer that is disposed on the barrier layer and includes Co, Fe, and B, and

wherein each of the first and second ferromagnetic material layers is entirely crystallized, and wherein a value of x in MgOx for the MgO layer is greater than 0 and less than 1.

13. The MTJ device of claim 12, wherein a barrier height ϕ

of the barrier layer is in a range of 0.2 to 0.5 eV.

14. The MTJ device of claim 13, wherein the barrier height ϕ

of the barrier layer is obtained by fitting J-V characteristics of the MTJ device to an equation (1);

J=[(2mϕ

)^1/2/Δ

s](e/h)²×

exp[−

(4π

Δ

s/h)×

(2mϕ

)^1/2]×

V 

 

(1)

where J is a tunnel current density flowing through the barrier layer, V is an applied bias voltage that is 100 mV or smaller, m is the free electron mass, e is the elementary electric charge, h is Planck'"'"'s constant, Δ

s is an effective thickness of the barrier layer that is equivalent to (t_MgO−

0.5 nm), and two is an actual thickness of the barrier layer.