Manufacturable laser diode

• US 10,367,334 B2
• Filed: 06/07/2016
• Issued: 07/30/2019
• Est. Priority Date: 02/10/2014
• Status: Active Grant

• Current Assignee: Kyocera SLD Laser Incorporated (Kyocera Corporation)
• Original Assignee: Soraa Laser Diode, Inc. (Kyocera Corporation)
• Inventors: McLaurin, Melvin, Sztein, Alexander, Hsu, Po Shan, Goutain, Eric, Steigerwald, Dan, Raring, James W.
• Primary Examiner(s): Karimy, Timor
• Application Number:
  US15/176,076
• Publication Number:
  US 20160294162A1
• Time in Patent Office: 1,148 Days
• Field of Search: 438 33, 438 68, 438113, 438460, 438 91, 438237, 438458
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 24/95 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/16152 Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01S 5/0203 Etching
• CPC Class Codes: H01S 5/0216 using an intermediate compound, e.g. a glue or solder
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/0234 Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/3013 AIIIBV compounds
• CPC Class Codes: H01S 5/32325 red laser based on InGaP
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP
• CPC Class Codes: H01S 5/4093 Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion

Abstract

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Claims

1. An intermediate structure of a laser device, comprising:

an epitaxial structure comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region;

a gallium and nitrogen containing substrate; and

a single sacrificial region disposed between the n-type cladding region of the epitaxial structure and the gallium and nitrogen containing substrate, the single sacrificial region having a narrower lateral width than each of the n-type cladding region, the active region, and the p-type cladding region.

2. The intermediate structure of claim 1 wherein the epitaxial structure comprises at least one of GaN, AlN, InN, InGaN, AlGaN, InAlN, InAlGaN, or one or more of AlAs, GaAs, GaP, InP, AlP, AlGaAs, AlInAs, InGaAs, AlGaP, AlInP, InGaP, AlInGaP, AlInGaAs, or AlInGaAsP.