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Pulsed valve manifold for atomic layer deposition

  • US 10,370,761 B2
  • Filed: 01/06/2017
  • Issued: 08/06/2019
  • Est. Priority Date: 10/28/2011
  • Status: Active Grant
First Claim
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1. A method of deposition comprising:

  • providing a manifold configured to deliver vapor to an injector, the manifold comprising a manifold body having a bore disposed within the body, the bore extending along a longitudinal axis from an inlet to an outlet downstream of the inlet,conducting an ALD process using the manifold, the ALD process comprising;

    supplying an inert gas to the inlet of the bore,supplying a first reactant vapor to a first portion of the bore such that the first reactant vapor enters the first portion of the bore at a plurality of angular positions about the longitudinal axis of the bore and at an acute angle with respect to the longitudinal axis of the bore,providing the first reactant vapor along a second portion of the bore that is downstream of the first portion of the bore;

    providing the first reactant vapor from the second portion of the bore downstream to the injector by way of the outlet, andproviding the first reactant vapor from the injector downstream to a reaction chamber.

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