Pulsed valve manifold for atomic layer deposition
First Claim
1. A method of deposition comprising:
- providing a manifold configured to deliver vapor to an injector, the manifold comprising a manifold body having a bore disposed within the body, the bore extending along a longitudinal axis from an inlet to an outlet downstream of the inlet,conducting an ALD process using the manifold, the ALD process comprising;
supplying an inert gas to the inlet of the bore,supplying a first reactant vapor to a first portion of the bore such that the first reactant vapor enters the first portion of the bore at a plurality of angular positions about the longitudinal axis of the bore and at an acute angle with respect to the longitudinal axis of the bore,providing the first reactant vapor along a second portion of the bore that is downstream of the first portion of the bore;
providing the first reactant vapor from the second portion of the bore downstream to the injector by way of the outlet, andproviding the first reactant vapor from the injector downstream to a reaction chamber.
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Accused Products
Abstract
A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.
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Citations
20 Claims
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1. A method of deposition comprising:
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providing a manifold configured to deliver vapor to an injector, the manifold comprising a manifold body having a bore disposed within the body, the bore extending along a longitudinal axis from an inlet to an outlet downstream of the inlet, conducting an ALD process using the manifold, the ALD process comprising; supplying an inert gas to the inlet of the bore, supplying a first reactant vapor to a first portion of the bore such that the first reactant vapor enters the first portion of the bore at a plurality of angular positions about the longitudinal axis of the bore and at an acute angle with respect to the longitudinal axis of the bore, providing the first reactant vapor along a second portion of the bore that is downstream of the first portion of the bore; providing the first reactant vapor from the second portion of the bore downstream to the injector by way of the outlet, and providing the first reactant vapor from the injector downstream to a reaction chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification