Thin film structure for micro-bolometer and method for fabricating the same
First Claim
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1. A resistor thin film for micro-bolometer, comprising:
- a semiconductor substrate;
an oxide thin film with perovskite structure formed on the semiconductor substrate; and
a vanadium dioxide (VO2) thin film in tetragonal crystal phase formed on the oxide thin film with perovskite structure.
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Abstract
Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO2) thin film in tetragonal VO2 crystal phase by deposition of VO2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO2 thin film in tetragonal crystal phase formed on the oxide thin film with perovskite structure.
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Citations
15 Claims
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1. A resistor thin film for micro-bolometer, comprising:
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a semiconductor substrate; an oxide thin film with perovskite structure formed on the semiconductor substrate; and a vanadium dioxide (VO2) thin film in tetragonal crystal phase formed on the oxide thin film with perovskite structure. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for fabricating a resistor thin film for micro-bolometer, comprising:
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preparing a semiconductor substrate; stacking an oxide thin film with perovskite structure on the semiconductor substrate; and forming a vanadium dioxide (VO2) thin film in tetragonal crystal phase on the oxide thin film with perovskite structure. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15)
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Specification