Semiconductor device and touch panel
First Claim
1. A semiconductor device comprising:
- a transistor;
a second insulating film; and
a touch sensor,wherein the transistor comprises;
a gate electrode;
a gate insulating film in contact with the gate electrode;
a first oxide semiconductor film that is in contact with the gate insulating film and overlaps with the gate electrode;
a source electrode and a drain electrode that are electrically connected to the first oxide semiconductor film;
a first insulating film over the first oxide semiconductor film, the source electrode, and the drain electrode; and
a second oxide semiconductor film that is over the first insulating film and overlaps with the first oxide semiconductor film,wherein the second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film,wherein the touch sensor comprises;
a first electrode; and
a second electrode,wherein one of the first electrode and the second electrode comprises a third oxide semiconductor film, andwherein the second oxide semiconductor film and the third oxide semiconductor film are formed in the same layer.
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Accused Products
Abstract
A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.
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Citations
19 Claims
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1. A semiconductor device comprising:
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a transistor; a second insulating film; and a touch sensor, wherein the transistor comprises; a gate electrode; a gate insulating film in contact with the gate electrode; a first oxide semiconductor film that is in contact with the gate insulating film and overlaps with the gate electrode; a source electrode and a drain electrode that are electrically connected to the first oxide semiconductor film; a first insulating film over the first oxide semiconductor film, the source electrode, and the drain electrode; and a second oxide semiconductor film that is over the first insulating film and overlaps with the first oxide semiconductor film, wherein the second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film, wherein the touch sensor comprises; a first electrode; and a second electrode, wherein one of the first electrode and the second electrode comprises a third oxide semiconductor film, and wherein the second oxide semiconductor film and the third oxide semiconductor film are formed in the same layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a transistor comprising a gate electrode, a gate insulating film, and a first oxide semiconductor film between the gate electrode and the gate insulating film; an insulating film over the transistor; a touch sensor comprising a first electrode and a second electrode; and a capacitor comprising the second electrode, a third electrode, and the insulating film between the second electrode and the third electrode, wherein the capacitor transmits visible light, and wherein the second electrode comprises a second oxide semiconductor film. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification