Semiconductor device and touch panel

• US 10,372,274 B2
• Filed: 04/05/2016
• Issued: 08/06/2019
• Est. Priority Date: 04/13/2015
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Kimura, Hajime, Jintyou, Masami, Hosaka, Yasuharu, Goto, Naoto, Iguchi, Takahiro, Kurosaki, Daisuke, Koezuka, Junichi
• Primary Examiner(s): Bibbins, LaTanya
• Application Number:
  US15/091,295
• Publication Number:
  US 20160299601A1
• Time in Patent Office: 1,218 Days
• CPC Class Codes: G06F 2203/04103 Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
• CPC Class Codes: G06F 3/0412 Digitisers structurally integrated in a display
• CPC Class Codes: G06F 3/04184 Synchronisation with the driving of the display or the backlighting unit to avoid interferences generated internally
• CPC Class Codes: G06F 3/0446 using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 59/40 OLEDs integrated with touch screens

Abstract

A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

Claims

1. A semiconductor device comprising:

a transistor;

a second insulating film; and

a touch sensor,

wherein the transistor comprises;

a gate electrode;

a gate insulating film in contact with the gate electrode;

a first oxide semiconductor film that is in contact with the gate insulating film and overlaps with the gate electrode;

a source electrode and a drain electrode that are electrically connected to the first oxide semiconductor film;

a first insulating film over the first oxide semiconductor film, the source electrode, and the drain electrode; and

a second oxide semiconductor film that is over the first insulating film and overlaps with the first oxide semiconductor film,

wherein the second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film,

wherein the touch sensor comprises;

a first electrode; and

a second electrode,

wherein one of the first electrode and the second electrode comprises a third oxide semiconductor film, and

wherein the second oxide semiconductor film and the third oxide semiconductor film are formed in the same layer.

2. The semiconductor device according to claim 1, wherein each thickness of the second oxide semiconductor film and the third oxide semiconductor film is greater than or equal to 30 nm and less than or equal to 70 nm.

3. The semiconductor device according to claim 1, wherein the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film are each an In-M-Zn oxide, and

wherein M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf.

4. The semiconductor device according to claim 1,

wherein the first insulating film comprises oxygen, and

wherein the second insulating film comprises hydrogen.

5. The semiconductor device according to claim 1, further comprising a capacitor that comprises the second insulating film between a pair of electrodes,

wherein the capacitor transmits visible light, and

wherein one of the pair of electrodes of the capacitor comprises the third oxide semiconductor film.

6. The semiconductor device according to claim 5, wherein the first electrode and the second electrode each comprise the third oxide semiconductor film.

7. A touch panel comprising:

the semiconductor device according to claim 5;

a conductive film; and

a liquid crystal element,

wherein the conductive film serves as a pixel electrode,

wherein the third oxide semiconductor film serves as a common electrode, and

wherein the other of the pair of electrodes of the capacitor comprises the conductive film.

8. A touch panel comprising:

the semiconductor device according to claim 5;

a conductive film; and

a liquid crystal element,

wherein the third oxide semiconductor film serves as a pixel electrode,

wherein the conductive film serves as a common electrode, and

wherein the other of the pair of electrodes of the capacitor comprises the conductive film.

9. A touch panel comprising:

the semiconductor device according to claim 1; and

a light-emitting element,

wherein the light-emitting element comprises;

a lower electrode;

an upper electrode; and

an EL layer positioned between the lower electrode and the upper electrode.

10. The touch panel according to claim 9, wherein the first electrode and the second electrode each comprise the third oxide semiconductor film.

11. The touch panel according to claim 9, wherein the other of the first electrode and the second electrode serves as the upper electrode.

12. An electronic device comprising:

the semiconductor device according to claim 1; and

a switch, a speaker, a display portion, or a housing.

13. An electronic device comprising:

the touch panel according to claim 7; and

a switch, a speaker, a display portion, or a housing.

14. A semiconductor device comprising:

a transistor comprising a gate electrode, a gate insulating film, and a first oxide semiconductor film between the gate electrode and the gate insulating film;

an insulating film over the transistor;

a touch sensor comprising a first electrode and a second electrode; and

a capacitor comprising the second electrode, a third electrode, and the insulating film between the second electrode and the third electrode,

wherein the capacitor transmits visible light, and

wherein the second electrode comprises a second oxide semiconductor film.

15. The semiconductor device according to claim 14, wherein a thickness of the second oxide semiconductor film is greater than or equal to 30 nm and less than or equal to 70 nm.

16. The semiconductor device according to claim 14, wherein the first oxide semiconductor film and the second oxide semiconductor film are each an In-M-Zn oxide, and

wherein M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf.

17. The semiconductor device according to claim 14,

wherein the insulating film comprises hydrogen.

18. A touch panel comprising:

the semiconductor device according to claim 14; and

a light-emitting element,

wherein the light-emitting element comprises;

a lower electrode;

an upper electrode; and

an EL layer positioned between the lower electrode and the upper electrode.

19. An electronic device comprising:

the semiconductor device according to claim 14; and

a switch, a speaker, a display portion, or a housing.