Content addressable memory device having electrically floating body transistor
First Claim
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1. A content addressable memory array comprising a plurality of content addressable memory cells arranged in a plurality of rows and columns, wherein each said content addressable memory cell comprises:
- a first floating body transistor;
a second floating body transistor; and
a third transistor;
wherein said first floating body transistor and said second floating body transistor are electrically connected in series through a common node;
wherein said third transistor is electrically connected to said common node; and
wherein said first floating body transistor and said second floating body transistor store complementary data.
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Abstract
A content addressable memory cell includes a first floating body transistor and a second floating body transistor. The first floating body transistor and the second floating body transistor are electrically connected in series through a common node. The first floating body transistor and the second floating body transistor store complementary data.
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Citations
22 Claims
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1. A content addressable memory array comprising a plurality of content addressable memory cells arranged in a plurality of rows and columns, wherein each said content addressable memory cell comprises:
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a first floating body transistor; a second floating body transistor; and a third transistor; wherein said first floating body transistor and said second floating body transistor are electrically connected in series through a common node; wherein said third transistor is electrically connected to said common node; and wherein said first floating body transistor and said second floating body transistor store complementary data. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A content addressable memory array comprising a plurality of content addressable memory cells arranged in a plurality of rows and columns, wherein each said content addressable memory cell comprises:
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a first bi-stable floating body transistor; and a second bi-stable floating body transistor; wherein said first bi-stable floating body transistor and said second bi-stable floating body transistor are electrically connected in series through a common node; and wherein said first floating body transistor and said second floating body transistor store complementary data. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A content addressable memory array comprising a plurality of content addressable memory cells arranged in a plurality of rows and columns, wherein each said content addressable memory cell comprises:
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a first transistor having a first floating body; a second transistor having a second floating body; a third transistor; a first drain region contacting said first floating body; a second drain region contacting said second floating body; a first source region contacting said first floating body, spaced apart from said first drain region; and a second source region contacting said second floating body, spaced apart from said second drain region; wherein said first and second drain regions are electrically connected to each other; wherein said third transistor is electrically connected to said first and second drain regions; and wherein said first floating body and said second floating body store complementary charge states. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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Specification