Deposition of organic films

• US 10,373,820 B2
• Filed: 06/01/2016
• Issued: 08/06/2019
• Est. Priority Date: 06/01/2016
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Tois, Eva E., Suemori, Hidemi, Pore, Viljami J., Haukka, Suvi P., Sharma, Varun
• Primary Examiner(s): Lu, Jiong-Ping
• Application Number:
  US15/170,769
• Publication Number:
  US 20170352533A1
• Time in Patent Office: 1,161 Days
• Field of Search: None
• CPC Class Codes: B05D 1/60 Deposition of organic layers from vapour phase vapour phase deposition in general C23C14/00, C23C16/00
• CPC Class Codes: C23C 16/02 Pretreatment of the material to be coated C23C16/04 takes precedence
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45527 characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02205 the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence

Abstract

Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

Claims

1. A process for selectively depositing an organic film on a substrate comprising a first surface and a second surface, the process comprising:

multiple consecutive deposition cycles each comprising;

contacting the substrate with a first vapor phase precursor; and

contacting the substrate with a second vapor phase precursor,

wherein contacting the substrate with the first and second vapor phase precursors forms the organic thin film selectively on the first surface relative to the second surface; and

subjecting the substrate to an etch process subsequent to the multiple consecutive deposition cycles, wherein the etch process has a chemistry for removal of organic material and removes substantially all of any deposited organic film from the second surface of the substrate and does not remove substantially all of the deposited organic film from the first surface of the substrate.

2. The process of claim 1, wherein the multiple consecutive deposition cycles are repeated until an organic thin film of a desired thickness is formed.

3. The process of claim 2, wherein the organic film comprises a polyimide film.

4. The process of claim 3, wherein the first vapor phase precursor comprises a diamine.

5. The process of claim 4, wherein the substrate is contacted with the first vapor phase precursor comprising a diamine before it is contacted with another, different precursor.

6. The process of claim 3, wherein the second vapor phase precursor comprises a dianyhydride.

7. The process of claim 3, wherein the substrate is held at a temperature of greater than about 170°

C. during the multiple consecutive deposition cycles.

8. The process of claim 2, wherein the organic film comprises a polyamide film.

9. The process of claim 8, wherein the first vapor phase precursor comprises a halogen.

10. The process of claim 8, wherein the substrate is held at a temperature of greater than about 80°

C. during the multiple consecutive deposition cycles.

11. The process of claim 1, wherein the second surface comprises an inorganic dielectric surface.

12. The process of claim 11, wherein the second surface is an inorganic dielectric surface.

13. The process of claim 1, wherein the substrate is contacted with the second vapor phase precursor before the substrate is contacted with the first vapor phase precursor.

14. The process of claim 1, wherein the thin organic film is deposited on the first surface relative to the second surface with a selectivity of above about 50%.

15. The process of claim 1, wherein the first surface comprises a metal oxide, elemental metal, or metallic surface.

16. The process of claim 1, wherein the first surface comprises tungsten.

17. The process of claim 1, wherein the second surface comprises silicon.

18. The process of claim 17, wherein the second surface comprises SiO₂.

19. The process of claim 1, wherein the etch process comprises exposing the substrate to hydrogen atoms, hydrogen radicals, hydrogen plasma, or combinations thereof.

20. The process of claim 1, wherein the etch process comprises exposing the substrate to oxygen atoms, oxygen radicals, oxygen plasma, or combinations thereof.

21. The process of claim 1, wherein each deposition cycle further comprises removing excess of the first vapor phase precursor and reaction by-products prior to contacting the substrate with the second vapor phase precursor.

22. The process of claim 21, wherein each deposition cycle further comprises removing excess of the second vapor phase precursor after contacting the substrate with the second vapor phase precursor and prior to a next deposition cycle.

23. A process for selectively depositing an organic film on a substrate comprising a first surface and a second surface, the process comprising:

multiple consecutive deposition cycles each comprising;

contacting the first surface and the second surface of the substrate with a first vapor phase precursor;

contacting the first surface and the second surface of the substrate with a second vapor phase precursor,

wherein contacting the first surface and the second surface of the substrate with the first and second vapor phase precursors forms the organic thin film selectively on the first surface relative to the second surface,

wherein the second surface comprises an inorganic dielectric surface; and

repeating the contacting steps until an organic thin film of a desired thickness is formed; and

subjecting the substrate to an etch process subsequent to the multiple consecutive deposition cycles, wherein the etch process has a chemistry for removal or organic material and removes substantially all of any deposited organic film from the second surface of the substrate and does not remove substantially all of the deposited organic film from the first surface of the substrate.

24. The process of claim 23, wherein the etch process comprises exposing the substrate to hydrogen atoms, hydrogen radicals, hydrogen plasma, or combinations thereof.

25. The process of claim 23, wherein the etch process comprises exposing the substrate to oxygen atoms, oxygen radicals, oxygen plasma, or combinations thereof.