Method for manufacturing gallium nitride substrate using core-shell nanoparticle

• US 10,373,825 B1
• Filed: 05/29/2018
• Issued: 08/06/2019
• Est. Priority Date: 05/29/2018
• Status: Active Grant

• Current Assignee: Industry-University Cooperation Foundation Hanyang University
• Original Assignee: Industry-University Cooperation Foundation Hanyang University
• Inventors: Park, Jea Gun, Shim, Tae Hun, Shim, Jae Hyoung, Kim, Il Hwan
• Primary Examiner(s): Smoot, Stephen W
• Application Number:
  US15/991,464
• Time in Patent Office: 434 Days
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02513 Microstructure
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02601 Nanoparticles fullerenes H10K85/211
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02634 Homoepitaxy
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02642 Mask materials other than SiO2 or SiN
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68345 used as a support during the manufacture of self supporting substrates
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Abstract

Disclosed is a method of fabricating a gallium nitride substrate using nanoparticles with a core-shell structure. A method of fabricating a gallium nitride substrate using nanoparticles with a core-shell structure according to an embodiment of the present disclosure includes a step of coating nanoparticles with a core-shell structure on a temporary substrate to form at least one nanoparticle layer; a step of allowing a pit gallium nitride (pit GaN) layer to grow on the temporary substrate; a step of allowing a mirror GaN layer (mirror GaN) to grow on the pit GaN layer; and a step of separating the temporary substrate, wherein each of the nanoparticles with a core-shell structure includes a core and an ionic polymer shell coated on a surface of the core surface.

Claims

1. A method of fabricating a gallium nitride substrate, the method comprising:

coating nanoparticles with a core-shell structure on a temporary substrate to form at least one nanoparticle layer;

allowing a pit gallium nitride (pit GaN) layer to grow on the temporary substrate;

allowing a mirror GaN layer (mirror GaN) to grow on the pit GaN layer; and

separating the temporary substrate,

wherein each of the nanoparticles with a core-shell structure comprises a core and an ionic polymer shell coated on a surface of the core surface.

2. The method according to claim 1, wherein a zeta potential of the nanoparticles with a core-shell structure is controlled by the shell.

3. The method according to claim 2, wherein the nanoparticles with a core-shell structure have a zeta potential opposite to that of the temporary substrate.

4. The method according to claim 1, wherein the ionic polymer shell is made of a cationic polymer material, the cationic polymer material comprising at least one of poly(diallyldimethylammonium chloride) (PDDA), polyethyleneimine (PEI), polyaniline (PANI), polyallylamine hydrochloride (PAH), polyacrylamide (PAA), polyvinylimidazole, polyamidoamine (PAMAM), polymethacryloxyethyltrialkyl ammonium halide, polyallylamine chloride, aminoethylated polyacrylamide, polyvinylamine, Hoffman-degradated polyacrylamide, and polyethyleamine.

5. The method according to claim 1, wherein the ionic polymer shell is made of an anionic polymer material, the anionic polymer material comprising at least one of polyacrylic acid, polymethacrylic acid, polystyrene (PS), polysulfonic acid, a polyacrylamide/acrylic acid copolymer, a polyacrylic acid/sulfonic acid copolymer, a polysulfonic acid/acrylamide copolymer, a polyacrylic acid/malonic acid copolymer, and a polystyrene/acrylic acid copolymer.

6. The method according to claim 1, wherein the core comprises at least one of SiO₂, Al₂O₃, TiO₂, ZrO₂, CrO₂, W, Re, Mo, Cr, Co, Si, Au, Zr, Ta, Ti, Nb, Ni, Pt, V, Hf, Pd, BN, and nitrides of W, Re, Mo, Cr, Si, Zr, Ta, Ti, Nb, V, Hf and Fe.

7. The method according to claim 1, wherein, in the coating, spin coating is used.

8. The method according to claim 1, wherein, in the coating, allowing a buffer layer to grow on the temporary substrate is further comprised.

9. The method according to claim 8, wherein the buffer layer comprises at least one of gallium nitride (GaN), aluminum nitride (AlN), and aluminum gallium nitride (AlGaN).

10. The method according to claim 8, wherein the buffer layer is formed by hydride vapor phase epitaxy (HVPE).

11. The method according to claim 1, wherein the temporary substrate comprises at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (InP), and silicon carbide (SiC).

12. The method according to claim 1, wherein, in the separating, the temporary substrate is removed using laser lift-off (LLO).