Display device and method for manufacturing the same
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor layer;
performing a first heat treatment on the oxide semiconductor layer;
forming a source electrode layer and a drain electrode layer after performing the first heat treatment, wherein the source electrode layer is formed over and in contact with a first region of the oxide semiconductor layer and the drain electrode layer is formed over and in contact with a second region of the oxide semiconductor layer;
forming an inorganic insulating layer over and in contact with a third region of the oxide semiconductor layer, the source electrode layer, and the drain electrode layer so that a resistance of the third region of the oxide semiconductor layer is increased; and
performing a second heat treatment after forming the inorganic insulating layer,wherein the third region of the oxide semiconductor layer is between the first region of the oxide semiconductor layer and the second region of the oxide semiconductor layer, andwherein a conductivity of the third region of the oxide semiconductor layer is lower than a conductivity of each of the first region and the second region of the oxide semiconductor layer.
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Abstract
An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.
210 Citations
9 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer; performing a first heat treatment on the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer after performing the first heat treatment, wherein the source electrode layer is formed over and in contact with a first region of the oxide semiconductor layer and the drain electrode layer is formed over and in contact with a second region of the oxide semiconductor layer; forming an inorganic insulating layer over and in contact with a third region of the oxide semiconductor layer, the source electrode layer, and the drain electrode layer so that a resistance of the third region of the oxide semiconductor layer is increased; and performing a second heat treatment after forming the inorganic insulating layer, wherein the third region of the oxide semiconductor layer is between the first region of the oxide semiconductor layer and the second region of the oxide semiconductor layer, and wherein a conductivity of the third region of the oxide semiconductor layer is lower than a conductivity of each of the first region and the second region of the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification