Contacts formed with self-aligned cuts
First Claim
1. A method comprising:
- forming a first source/drain region and a second source/drain region adjacent to a temporary gate structure;
forming a sacrificial layer over the first source/drain region and the second source/drain region;
etching a trench in the sacrificial layer that is disposed between the first source/drain region and the second source/drain region;
depositing a first dielectric material in the trench to form a dielectric pillar between the first source/drain region and the second source/drain region;
after depositing the first dielectric material in the trench, forming a fill layer over the first source/drain region and the second source/drain region;
after forming the fill layer, replacing the temporary gate structure with a functional gate structure;
after replacing the temporary gate structure with the functional gate structure, removing the fill layer; and
forming a conductive layer having a first portion contacting the first source/drain region and a second portion contacting the second source/drain region,wherein the dielectric pillar separates the first portion of the conductive layer from the second portion of the conductive layer.
3 Assignments
0 Petitions
Accused Products
Abstract
Methods of fabricating structures that include contacts coupled with a source/drain region of a field-effect transistor. Source/drain regions are formed adjacent to a temporary gate structure. In one process, a sacrificial layer is disposed over the source/drain regions and a dielectric pillar is formed in the sacrificial layer between the source/drain regions, followed by deposition of a fill material, replacement of the temporary gate structure with a functional gate structure, and removal of the fill material. In another process, the fill material is formed first and the temporary gate structure is replaced by a functional gate structure; following removal of the fill material, a sacrificial layer is disposed over the source/drain regions and a dielectric pillar is formed in the sacrificial layer between the source/drain regions. A conductive layer having separate portions contacting the separate source/drain regions is formed, with the dielectric pillar separating the portions of the conductive layer.
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Citations
9 Claims
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1. A method comprising:
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forming a first source/drain region and a second source/drain region adjacent to a temporary gate structure; forming a sacrificial layer over the first source/drain region and the second source/drain region; etching a trench in the sacrificial layer that is disposed between the first source/drain region and the second source/drain region; depositing a first dielectric material in the trench to form a dielectric pillar between the first source/drain region and the second source/drain region; after depositing the first dielectric material in the trench, forming a fill layer over the first source/drain region and the second source/drain region; after forming the fill layer, replacing the temporary gate structure with a functional gate structure; after replacing the temporary gate structure with the functional gate structure, removing the fill layer; and forming a conductive layer having a first portion contacting the first source/drain region and a second portion contacting the second source/drain region, wherein the dielectric pillar separates the first portion of the conductive layer from the second portion of the conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification