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Contacts formed with self-aligned cuts

  • US 10,373,875 B1
  • Filed: 03/22/2018
  • Issued: 08/06/2019
  • Est. Priority Date: 03/22/2018
  • Status: Active Grant
First Claim
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1. A method comprising:

  • forming a first source/drain region and a second source/drain region adjacent to a temporary gate structure;

    forming a sacrificial layer over the first source/drain region and the second source/drain region;

    etching a trench in the sacrificial layer that is disposed between the first source/drain region and the second source/drain region;

    depositing a first dielectric material in the trench to form a dielectric pillar between the first source/drain region and the second source/drain region;

    after depositing the first dielectric material in the trench, forming a fill layer over the first source/drain region and the second source/drain region;

    after forming the fill layer, replacing the temporary gate structure with a functional gate structure;

    after replacing the temporary gate structure with the functional gate structure, removing the fill layer; and

    forming a conductive layer having a first portion contacting the first source/drain region and a second portion contacting the second source/drain region,wherein the dielectric pillar separates the first portion of the conductive layer from the second portion of the conductive layer.

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