Hybrid integrated optical device
First Claim
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1. A hybrid integrated optical device comprising:
- a silicon-on-insulator substrate that includes a silicon handle portion, an oxide layer, and a silicon layer, and wherein a first portion of the silicon layer forms a recess relative to a second portion of the silicon layer;
a first pad, disposed within the recess and bonded to the first portion of the silicon layer;
a device comprising a compound semiconductor material;
a second pad, disposed on a first region of the device and bonded to the device; and
a bonding metal, wherein;
the bonding metal comprises In0.7Pd0.3;
the bonding metal is disposed between the first pad and the second pad;
the bonding metal is bonded to the first pad and the second pad; and
the bonding metal, the first pad, and the second pad secure the device to the substrate;
and wherein a height of the device is coplanar with or exceeds a height of the second portion of the silicon layer.
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Abstract
A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.
116 Citations
14 Claims
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1. A hybrid integrated optical device comprising:
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a silicon-on-insulator substrate that includes a silicon handle portion, an oxide layer, and a silicon layer, and wherein a first portion of the silicon layer forms a recess relative to a second portion of the silicon layer; a first pad, disposed within the recess and bonded to the first portion of the silicon layer; a device comprising a compound semiconductor material; a second pad, disposed on a first region of the device and bonded to the device; and a bonding metal, wherein; the bonding metal comprises In0.7Pd0.3; the bonding metal is disposed between the first pad and the second pad; the bonding metal is bonded to the first pad and the second pad; and the bonding metal, the first pad, and the second pad secure the device to the substrate; and wherein a height of the device is coplanar with or exceeds a height of the second portion of the silicon layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A hybrid integrated optical device wherein comprising:
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a silicon-on-insulator substrate comprising a silicon handle portion, an oxide layer, and a silicon layer; a first pad, disposed on a first region of the substrate and bonded to the substrate, wherein the first region of the substrate is a first region of the silicon layer; a compound semiconductor optical device; a second pad, disposed on a first region of the compound semiconductor optical device and bonded to the compound semiconductor optical device; and a bonding metal, wherein; the bonding metal forms a first bond; the bonding metal comprises In0.7Pd0.3; the bonding metal is disposed between the first pad and the second pad; the bonding metal is bonded to the first pad and the second pad; the bonding metal, the first pad, and the second pad secure the compound semiconductor optical device to the substrate; and the substrate and the device form a second bond, the second bond comprising a direct semiconductor/semiconductor bond between a second region of the silicon layer and a second region of the compound semiconductor optical device. - View Dependent Claims (10, 11, 12, 13, 14)
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Specification