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Semiconductor memory device and method of fabricating the same

  • US 10,373,959 B2
  • Filed: 07/31/2018
  • Issued: 08/06/2019
  • Est. Priority Date: 09/18/2017
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor memory device, comprising:

  • etching a substrate wherein a trench is formed that crosses active regions of the substrate;

    forming a gate insulating layer on bottom and side surfaces of the trench;

    forming a first gate electrode on the gate insulating layer that fills a lower portion of the trench;

    oxidizing a top surface of the first gate electrode wherein a preliminary barrier layer is formed;

    nitrifying the preliminary barrier layer wherein a barrier layer is formed; and

    forming a second gate electrode on the barrier layer that fills an upper portion of the trench.

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