Metal oxide semiconductor device

• US 10,374,030 B2
• Filed: 08/25/2017
• Issued: 08/06/2019
• Est. Priority Date: 12/28/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Takahashi, Masahiro, Hirohashi, Takuya, Tsubuku, Masashi, Oota, Masashi
• Primary Examiner(s): Yushin, Nikolay K
• Application Number:
  US15/687,061
• Publication Number:
  US 20170373135A1
• Time in Patent Office: 711 Days
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/247 Amorphous materials
• CPC Class Codes: H01L 29/26 including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 , e.g. alloys
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.

Claims

1. A semiconductor device comprising:

a first silicon oxide film;

a first oxide semiconductor film over the first silicon oxide film, the first oxide semiconductor film comprising a first metal element; and

a second oxide semiconductor film over the first oxide semiconductor film, the second oxide semiconductor film comprising the first metal element,

wherein the second oxide semiconductor film further comprises carbon or silicon as an impurity, and

wherein an electron diffraction pattern by electron diffraction with a beam diameter of 1 nmφ

of the second oxide semiconductor film has a plurality of circumferentially arranged spots.

2. The semiconductor device according to claim 1, wherein the first oxide semiconductor film has a different composition from the second oxide semiconductor film.

3. The semiconductor device according to claim 1,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium, gallium and zinc,

wherein a concentration of the second oxide semiconductor film is higher than a concentration of the first oxide semiconductor film.

4. The semiconductor device according to claim 1,

wherein the second oxide semiconductor film comprises a first region and a second region, and

wherein the first region has a different degree of crystallinity from the second region.

5. The semiconductor device according to claim 1, wherein the impurity is carbon.

6. A displayer device comprising the semiconductor device according to claim 1.

7. The semiconductor device according to claim 1,

wherein the second oxide semiconductor film comprises indium, a second metal element and zinc,

wherein the second metal element is one of Al, Ti, Ga, Y, Zr, La, Ce, Nd and Hf,

wherein the first metal element is one of indium, the second metal element and zinc, and

wherein a proportion of indium is greater than or equal to 25 atomic % and a proportion of the first metal element is less than 75 atomic % when zinc and oxygen are eliminated from consideration.

8. The semiconductor device according to claim 7, further comprising:

a third oxide semiconductor film over the second oxide semiconductor film; and

a second silicon oxide film over the third oxide semiconductor film,

wherein the third oxide semiconductor film comprises one of indium, the second metal element and zinc.

9. The semiconductor device according to claim 1, wherein the first oxide semiconductor film has a different crystal structure from the second oxide semiconductor film.

10. The semiconductor device according to claim 9,

wherein the second oxide semiconductor film comprises a first region including a crystalline part, and

wherein an electron diffraction pattern by electron diffraction with a beam diameter of 1 nmφ

of the second oxide semiconductor film has a plurality of spots which are arranged in an ordered manner.

11. A semiconductor device comprising:

a first silicon oxide film;

a first oxide semiconductor film over the first silicon oxide film, the first oxide semiconductor film comprising a first metal element; and

a second oxide semiconductor film over the first oxide semiconductor film, the second oxide semiconductor film comprising the first metal element,

wherein the second oxide semiconductor film further comprises carbon or silicon as an impurity,

wherein concentration of carbon or silicon is lower than or equal to 3×

10¹⁸/cm³, and

wherein an electron diffraction pattern by electron diffraction with a beam diameter of 1 nmφ

of the second oxide semiconductor film has a plurality of circumferentially arranged spots.

12. The semiconductor device according to claim 11, wherein the first oxide semiconductor film has a different composition from the second oxide semiconductor film.

13. The semiconductor device according to claim 11,

wherein the second oxide semiconductor film comprises a first region and a second region, and

wherein the first region has a different degree of crystallinity from the second region.

14. The semiconductor device according to claim 11, wherein the impurity is carbon.

15. A displayer device comprising the semiconductor device according to claim 11.

16. The semiconductor device according to claim 11, wherein the first oxide semiconductor film has a different crystal structure from the second oxide semiconductor film.

17. The semiconductor device according to claim 16,

wherein the second oxide semiconductor film comprises a first region including a crystalline part, and

wherein an electron diffraction pattern by electron diffraction with a beam diameter of 1 nmφ

of the second oxide semiconductor film has a plurality of spots which are arranged in an ordered manner.

18. The semiconductor device according to claim 11,

wherein the second oxide semiconductor film comprises indium, a second metal element and zinc,

wherein the second metal element is one of Al, Ti, Ga, Y, Zr, La, Ce, Nd and Hf,

wherein the first metal element is one of indium, the second metal element and zinc, and

wherein a proportion of indium is greater than or equal to 25 atomic % and a proportion of the first metal element is less than 75 atomic % when zinc and oxygen are eliminated from consideration.

19. The semiconductor device according to claim 18, further comprising:

a third oxide semiconductor film over the second oxide semiconductor film; and

a second silicon oxide film over the third oxide semiconductor film,

wherein the third oxide semiconductor film comprises one of indium, the second metal element and zinc.

20. The semiconductor device according to claim 19, wherein the first oxide semiconductor film has a lower film density than the second oxide semiconductor film.

21. A semiconductor device comprising:

a first silicon oxide film;

a first oxide semiconductor film over the first silicon oxide film, the first oxide semiconductor film comprising a first metal element; and

a second oxide semiconductor film over the first oxide semiconductor film, the second oxide semiconductor film comprising the first metal element,

wherein an electron diffraction pattern by electron diffraction with a beam diameter of 1 nmφ

of the second oxide semiconductor film has a plurality of circumferentially arranged spots.