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Silicon-based visible and near-infrared optoelectric devices

  • US 10,374,109 B2
  • Filed: 10/16/2017
  • Issued: 08/06/2019
  • Est. Priority Date: 05/25/2001
  • Status: Expired due to Fees
First Claim
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1. A method for processing a silicon semiconductor substrate, comprising:

  • irradiating a surface of the silicon substrate with a plurality of circularly polarized short laser pulses so as to generate a plurality of surface structures,wherein the short laser pulses have a pulse width in a range of about 50 femtoseconds to about 50 picoseconds, a central wavelength in a range of about 200 nm to about 1200 nm, and a fluence in a range of about 1 kJ/m2 to about 12 kJ/m2, andwherein the plurality of surface structures have a substantially circular base.

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