Optical device structure using GaN substrates and growth structures for laser applications

• US 10,374,392 B1
• Filed: 03/28/2018
• Issued: 08/06/2019
• Est. Priority Date: 04/13/2009
• Status: Active Grant

• Current Assignee: Kyocera SLD Laser Incorporated (Kyocera Corporation)
• Original Assignee: Soraa Laser Diode, Inc. (Kyocera Corporation)
• Inventors: Raring, James W.
• Primary Examiner(s): Nguyen, Tuan N
• Application Number:
  US15/938,802
• Time in Patent Office: 496 Days
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/0014 Measuring characteristics or properties thereof measuring techniques per se G01J, G01K, G01N, G01R
• CPC Class Codes: H01S 5/0202 Cleaving
• CPC Class Codes: H01S 5/028 Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
• CPC Class Codes: H01S 5/0287 Facet reflectivity
• CPC Class Codes: H01S 5/1085 Oblique facets
• CPC Class Codes: H01S 5/2009 by using electron barrier layers
• CPC Class Codes: H01S 5/2031 characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
• CPC Class Codes: H01S 5/2201 in a specific crystallographic orientation
• CPC Class Codes: H01S 5/3202 grown on specifically orientated substrates, or using orientation dependent growth
• CPC Class Codes: H01S 5/32025 non-polar orientation
• CPC Class Codes: H01S 5/320275 semi-polar orientation
• CPC Class Codes: H01S 5/3213 asymmetric clading layers
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
• CPC Class Codes: H01S 5/4025 Array arrangements, e.g. constituted by discrete laser diodes or laser bar H01S5/42 takes precedence

Abstract

Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.

Claims

1. An optical device comprising:

a gallium nitride substrate member having a semipolar or nonpolar crystalline surface region;

an n-type gallium nitride region overlying the surface region;

an n-side SCH layer comprising InGaN overlying the n-type gallium nitride region;

an active region overlying the n-side SCH layer, the active region comprising multiple quantum wells each having InGaN;

a p-side SCH layer comprising InGaN overlying the active region;

a laser stripe region formed overlying the p-side SCH layer, the laser stripe region characterized by a cavity orientation substantially parallel to a first-direction, the laser stripe region having a first end and a second end, the laser stripe region comprising a p-type gallium nitride region;

an n-type metal region overlying a backside of the gallium nitride substrate member;

an overlying p-type metal region overlying an upper portion of the laser stripe region;

a first cleaved m-face facet provided on the first end of the laser stripe region; and

a second cleaved m-face facet provided on the second end of the laser stripe region, wherein the first cleaved m-face facet is substantially parallel with the second cleaved m-face facet.

2. The device of claim 1 wherein the first cleaved m-face facet comprises a first mirror surface.

3. The device of claim 2 wherein the second cleaved m-face facet comprises a second mirror surface.

4. The device of claim 1 wherein the n-type gallium nitride region comprises a silicon entity.

5. The device of claim 1 wherein the p-type gallium nitride region comprises a magnesium entity.

6. The device of claim 1 wherein the multiple quantum wells comprise one or more barrier layers.

7. The device of claim 1 further comprising an electron blocking layer comprising aluminum disposed between the active region and the p-type gallium nitride region.

8. The device of claim 1 further comprising a spontaneously emitted light characterized by a wavelength ranging 390 nm to 420 nm, 420 nm to 440 nm, 440 nm to 470 nm, 470 nm to 490 nm, 490 nm to 510 nm, and 510 nm to 530 nm.

9. The device of claim 1 wherein the laser stripe region is provided by an etching process selected from dry etching or wet etching.

10. The device of claim 1 wherein the laser stripe region comprises an overlying dielectric layer exposing an upper portion of the laser stripe region.

11. The device of claim 1 wherein the p-type metal region comprises gallium nitride comprising magnesium entities.

12. An optical device comprising:

a gallium nitride substrate member having a semipolar or nonpolar crystalline surface region;

an n-type GaN cladding layer overlying the surface region;

an n-side SCH layer overlying the n-type GaN cladding layer, the n-side SCH layer comprised of InGaN;

a multiple quantum well active region overlying the n-side SCH layer, the multiple quantum well active region comprised of InGaN quantum wells separated by GaN barriers;

a p-side SCH layer overlying the multiple quantum well active region, the p-side SCH layer comprised of InGaN;

an electron blocking layer overlying the p-side SCH layer, the electron blocking layer comprised of AlGaN doped with magnesium;

a p-type GaN cladding layer overlying the electronic blocking layer, the p-type GaN cladding layer having a magnesium doping;

a p++-type GaN contact layer with a magnesium doping;

a laser stripe region having a first end and a second end;

a first cleaved m-face facet provided on the first end of the laser stripe region; and

a second cleaved m-face facet provided on the second end of the laser stripe region.

13. The device of claim 12 wherein the first cleaved m-face facet and the second cleaved m-face facet comprise mirror surfaces.

14. The device of claim 12 wherein the n-type GaN cladding layer comprises a silicon doping.

15. The device of claim 12 wherein the laser stripe region comprises an overlying dielectric layer exposing an upper portion of the laser stripe region.