Increased wetting of colloidal silica as a polishing slurry

• US 10,377,014 B2
• Filed: 02/28/2017
• Issued: 08/13/2019
• Est. Priority Date: 02/28/2017
• Status: Active Grant

• Current Assignee: Ecolab USA Incorporated (Ecolab, Inc.)
• Original Assignee: Ecolab USA Incorporated (Ecolab, Inc.)
• Inventors: Killeen, Yvonne Marie, Blattner, Amanda Ruth
• Primary Examiner(s): Ahmed, Shamim
• Application Number:
  US15/445,610
• Publication Number:
  US 20180244532A1
• Time in Patent Office: 896 Days
• Field of Search: None
• CPC Class Codes: B24B 37/044 characterised by the composition of the lapping agent
• CPC Class Codes: B24B 37/24 characterised by the composition or properties of the pad materials
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: C09K 3/1463 Aqueous liquid suspensions

Abstract

A method, kit, and composition for polishing a sapphire surface are described here. The invention involves a sapphire surface polishing composition comprising colloidal silica particles and an extended or gemini surfactant that can reduce the contact angles of the polishing composition on both polishing pads and sapphire surfaces.

Claims

1. A method of polishing a sapphire surface, comprising:

abrading a sapphire surface with a rotating polishing pad and a polishing composition,

wherein the polishing composition comprises an effective amount of colloidal silica and a surfactant, the colloidal silica has a particle size distribution of from about 5 nm to about 120 nm;

the ratio of the standard deviation of the particle size of the colloidal silica (CT) to the mean particle size of the colloidal silica (r) is from about 0.30 to about 0.90; and

the surfactant is one represented by the following formula I or II,

2. The method of claim 1, wherein the surfactant is a gemini surfactant represented by the following formula,

3. The method of claim 1, wherein the surfactant is an extended surfactant represented by the following formula,

R¹¹—

(PO)₁₆-(EO)₂—

SO₃H, where R¹¹ is a C₁₂-C₁₄ alkyl.

4. The method of claim 1, wherein the polishing composition further comprises a salt.

5. The method of claim 1, wherein the polishing composition further comprises a potassium sulfate.

6. The method of claim 1, wherein the polishing composition has a contact angle of less than about 50 degrees on the sapphire surface after about 30 seconds.

7. The method of claim 1, wherein the polishing composition has a contact angle less than about 30 degrees on the sapphire surface after about 30 seconds.

8. The method of claim 1, wherein the polishing composition contains about 2,000 ppm of the surfactant.

9. The method of claim 1, wherein the polishing composition contains about 1 wt-% to about 50 wt-% of the colloidal silica, and wherein the colloidal silica has a particle size distribution of from about 5 nm to about 50 nm, or from about 50 nm to about 120 nm.

10. The method of claim 5, wherein potassium sulfate is from about 100 ppm to about 3000 ppm in the polishing composition.

11. The method of claim 1, wherein the ratio of the standard deviation of the particle size of the colloidal silica (CT), to the mean particle size of the colloidal silica (r), is from about 0.50 to about 0.90.

12. The method of claim 1, wherein the polishing composition further comprises an alkaline substance, inorganic polishing particles, a water-soluble alcohol, a chelating agent, a buffering agent, or combination thereof.

13. The method of claim 1, wherein the pH of the polishing composition is from about 2.0 to about 10.5, about 9.5, or about 3.0.

14. The method of claim 1, wherein the polishing pad is applied to the sapphire surface with a downforce of about 5 psi to about 25 psi and the polishing pad is rotating at a rate of about 40 rpm to about 120 rpm.

15. The method of claim 1, wherein the polishing pad comprises a polyurethane impregnated polyester material.

16. The method of claim 1, wherein the polishing pad has a compressibility of about 1% to about 40%.

17. The method of claim 1, wherein the polishing pad has a Shore D hardness of about 50 to about 60.

18. The method of claim 1, wherein the sapphire surface is a sapphire C-plane surface or a sapphire R-plane surface.