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Multi-electrode molecular sensing devices and methods of making the same

  • US 10,378,103 B2
  • Filed: 10/04/2018
  • Issued: 08/13/2019
  • Est. Priority Date: 07/26/2016
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing structure usable in a molecular sensor device, the method comprising:

  • forming a stack by at least;

    providing a first outer dielectric layer;

    depositing a first electrode layer on the first outer dielectric layer;

    depositing an inner dielectric layer on the first electrode layer;

    depositing a second electrode layer on the inner dielectric layer; and

    depositing a second outer dielectric layer on the second electrode layer, wherein the inner dielectric layer has a first thickness and the second outer dielectric layer has a second thickness at least one order of magnitude greater than the first thickness, wherein the first electrode layer and second electrode layer are deposited with a thickness of 1 to 40 nm, wherein the inner dielectric layer is deposited with a thickness of 1 to 40 nm, and wherein the second outer dielectric layer is deposited with a thickness between 50 to 2,000 nm;

    slicing through the stack at least once at an angle to the layers in the stack to form a plurality of chips from the sliced portions of the stack; and

    attaching the plurality of chips to a substrate so that the sliced portions of the first electrode layer and the second electrode layer form a plurality of pairs of electrode sheets at an angle to a substrate plane defined by the substrate, and so that the sliced portions of the inner dielectric layer forms a plurality of inner dielectric sheets with each inner dielectric sheet between each electrode sheet in each pair of electrode sheets.

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