Low volume showerhead with faceplate holes for improved flow uniformity

• US 10,378,107 B2
• Filed: 09/10/2015
• Issued: 08/13/2019
• Est. Priority Date: 05/22/2015
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Chandrasekharan, Ramesh, Sangplung, Saangrut, Swaminathan, Shankar, Pasquale, Frank, Kang, Hu, LaVoie, Adrien, Augustyniak, Edward, Sakiyama, Yukinori, Baldasseroni, Chloe, Varadarajan, Seshasayee, Sajjad, Basha, Petraglia, Jennifer L.
• Primary Examiner(s): Yuan, Dah-Wei D.
• Assistant Examiner(s): Kitt, Stephen A
• Application Number:
  US14/850,816
• Publication Number:
  US 20160340782A1
• Time in Patent Office: 1,433 Days
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.

Claims

1. A showerhead for use in a semiconductor processing apparatus, the showerhead comprising:

a plenum volume having a first surface and a second surface opposite the first surface, the first surface and the second surface at least partially defining the plenum volume of the showerhead;

a faceplate including a plurality of faceplate through-holes, the plurality of faceplate through-holes extending from a first side to a second side of the faceplate, the first side of the faceplate defining the first surface of the plenum volume, the faceplate through-holes each having a radial diameter of less than about 0.04 inches across a full thickness of the faceplate;

a backplate opposite the faceplate, wherein a side of the backplate defines the second surface of the plenum volume;

a stem connected to the backplate and in fluid communication with the plenum volume, wherein the stem has an inner diameter defined by a tube extending through the stem and an outer diameter defined by the outermost surface of the stem greater than the inner diameter of the stem; and

a baffle plate including a plurality of baffle through-holes, the baffle plate being configured to distribute gas flow around edges of the baffle plate and through the baffle plate, the baffle plate being positioned at least partially within or fully within a region that is recessed into the side of the backplate and forms a discrete transition space between the plenum volume and the stem that extends at least partially through a thickness of the backplate, the discrete transition space being in direct fluid communication with the stem and with the plenum volume, the discrete transition space having an outer diameter defined by the outer diameter of the stem.

2. The showerhead of claim 1, wherein a diameter of the plenum volume is greater than the outer diameter of the discrete transition space.

3. The showerhead of claim 1, wherein a porosity of the baffle plate is between about 5% and about 25%, and wherein the plurality of baffle through-holes are positioned more towards the edges of the baffle plate than the center of the baffle plate.

4. The showerhead of claim 1, wherein the diameter of the baffle plate is greater than the inner diameter of the stem and is at least four times less than the diameter of the faceplate.

5. The showerhead of claim 1, wherein the radial diameter of each of the faceplate through-holes is between about 0.01 inches and about 0.03 inches.

6. The showerhead of claim 1, wherein a number of faceplate through-holes is between about 300 and about 6000 through-holes.

7. The showerhead of claim 1, wherein the radial diameter of the faceplate through-holes is configured to increase the spatial uniformity of the flow of gas coming out of the faceplate.

8. The showerhead of claim 1, wherein the radial diameter of the faceplate through-holes is configured to reduce backstreaming of plasma coming into the plenum volume from outside of the faceplate.

9. A semiconductor processing station, the semiconductor processing station including the showerhead of claim 1.

10. The semiconductor processing station of claim 9, further comprising:

a controller configured with instructions to perform the following operations;

providing a substrate into the semiconductor processing station;

introducing reactant gas into the semiconductor processing station through the showerhead to adsorb onto the surface of the substrate;

introducing a purge gas into the semiconductor processing station through the showerhead; and

applying a plasma to form a thin film layer from the adsorbed reactant gas on the surface of the substrate.

11. The semiconductor processing station of claim 10, wherein the plasma is applied at an RF power of greater than about 500 W, and a film non-uniformity of the thin film layer is less than about 0.5%.

12. The semiconductor processing station of claim 11, wherein the film non-uniformity of the thin film layer is less than about 0.3%.

13. The semiconductor processing station of claim 10, wherein forming the thin film layer in an atomic layer deposition (ALD) cycle is performed in less than about 1.5 seconds.

14. A showerhead for use in a semiconductor processing apparatus, the showerhead comprising:

a plenum volume having a first surface and a second surface opposite the first surface, the first surface and the second surface at least partially defining the plenum volume of the showerhead;

a faceplate including a plurality of faceplate through-holes, the plurality of faceplate through-holes extending from a first side to a second side of the faceplate, the first side of the faceplate defining the first surface of the plenum volume, the plurality of faceplate through-holes including central through-holes and edge through-holes surrounding the central through-holes, the edge through-holes positioned at the second side of the faceplate circumferentially at a diameter larger than a diameter of a substrate for which the showerhead is configured for use;

a backplate opposite the faceplate, wherein a side of the backplate defines the second surface of the plenum volume;

a stem connected to the backplate and in fluid communication with the plenum volume, wherein the stem has an inner diameter defined by a tube extending through the stem and an outer diameter defined by the outermost surface of the stem greater than the inner diameter of the stem; and

a baffle plate including a plurality of baffle through-holes, the baffle plate being configured to distribute gas flow around edges of the baffle plate and through the baffle plate, the baffle plate being positioned at least partially within or fully within a region that is recessed into the side of the backplate and forms a discrete transition space between the plenum volume and the stem that extends at least partially through a thickness of the backplate, the discrete transition space being in direct fluid communication with the stem and with the plenum volume, the discrete transition space having an outer diameter defined by the outer diameter of the stem.

15. The showerhead of claim 14, wherein the edge through-holes are positioned at the second side of the faceplate circumferentially along a ring having a diameter of greater than about 300 mm.

16. The showerhead of claim 14, wherein the edge through-holes are sloped at an angle less than about 90 degrees from the first side to the second side of the faceplate.

17. The showerhead of claim 16, wherein the edge through-holes are sloped at an angle less than about 75 degrees from the first side to the second side of the faceplate.

18. The showerhead of claim 14, wherein the edge through-holes are positioned at the second side of the faceplate circumferentially along a first ring and a second ring surrounding the first ring.

19. The showerhead of claim 18, wherein the first ring has a diameter greater than about 300 mm and the second ring has a diameter greater than about 310 mm.

20. The showerhead of claim 18, wherein the edge through-holes of the second ring are sloped at an angle of less than about 75 degrees from the first side to the second side of the faceplate.

21. The showerhead of claim 14, wherein a diameter of the plenum volume is greater than the outer diameter of the discrete transition space.

22. The showerhead of claim 14, wherein the diameter of the baffle plate is greater than the inner diameter of the stem and is at least four times less than the diameter of the faceplate.

23. The showerhead of claim 14, wherein a radial diameter of each of the faceplate through-holes is less than about 0.04 inches across a full thickness of the faceplate.

24. The showerhead of claim 14, wherein the edge through-holes are positioned to increase the spatial uniformity of the flow of gas coming out of the faceplate.

25. A semiconductor processing station, the semiconductor processing station including the showerhead of claim 14.

26. The semiconductor processing station of claim 25, further comprising:

a controller configured with instructions to perform the following operations;

providing a substrate into the semiconductor processing station;

introducing reactant gas into the semiconductor processing station through the showerhead to adsorb onto the surface of the substrate;

introducing a purge gas into the semiconductor processing station through the showerhead; and

applying a plasma to form a thin film layer from the adsorbed reactant gas on the surface of the substrate.