Leadless stack comprising multiple components

• US 10,381,162 B2
• Filed: 08/07/2017
• Issued: 08/13/2019
• Est. Priority Date: 05/26/2010
• Status: Active Grant

• Current Assignee: Kemet Electronics Corporation (Yageo Corporation)
• Original Assignee: Kemet Electronics Corporation (Yageo Corporation)
• Inventors: McConnell, John E., Renner, Garry L., Bultitude, John, Hill, R. Allen, Miller, Galen W.
• Primary Examiner(s): Thomas, Eric W
• Application Number:
  US15/670,247
• Publication Number:
  US 20170358397A1
• Time in Patent Office: 736 Days
• CPC Class Codes: B22F 3/1035 Liquid phase sintering
• CPC Class Codes: B23K 20/002 specially adapted for particular articles or work B23K20/129 takes precedence
• CPC Class Codes: B23K 20/026 with diffusion of soldering material
• CPC Class Codes: B23K 20/16 with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
• CPC Class Codes: B23K 20/22 taking account of the properties of the materials to be welded
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: B23K 2101/42 Printed circuits
• CPC Class Codes: B23K 35/0227 Rods, wires B23K35/0244 takes precedence
• CPC Class Codes: B23K 35/3613 Polymers, e.g. resins
• CPC Class Codes: H01G 4/002 Details
• CPC Class Codes: H01G 4/0085 Fried electrodes
• CPC Class Codes: H01G 4/012 Form of non-self-supporting electrodes
• CPC Class Codes: H01G 4/12 Ceramic dielectrics H01G4/085 takes precedence
• CPC Class Codes: H01G 4/1227 based on alkaline earth titanates
• CPC Class Codes: H01G 4/232 electrically connecting two or more layers of a stacked or rolled capacitor
• CPC Class Codes: H01G 4/2325 characterised by the material of the terminals
• CPC Class Codes: H01G 4/248 the terminals embracing or surrounding the capacitive element, e.g. caps H01G4/252 takes precedence
• CPC Class Codes: H01G 4/30 Stacked capacitors H01G4/33 takes precedence
• CPC Class Codes: H01G 4/38 Multiple capacitors, i.e. structural combinations of fixed capacitors
• CPC Class Codes: H01G 4/40 Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
• CPC Class Codes: H01L 2224/83825 : Solid-liquid interdiffusion
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: Y10T 29/435 : Solid dielectric type

Abstract

An electronic component is described wherein the electronic component comprises a stack of electronic elements comprising a transient liquid phase sintering adhesive between and in electrical contact with each said first external termination of adjacent electronic elements.

Claims

1. An electronic component stack comprising:

at least one multilayered ceramic capacitor comprising;

first electrodes and second electrodes in an alternating parallel arrangement with a dielectric between adjacent said first electrodes and said second electrodes wherein said first electrodes have a first polarity and terminate at a first side of said multilayered ceramic capacitor and said second electrodes have a second polarity and terminate at a second side of said multilayered ceramic capacitor;

a first transient liquid phase sintering compatible material on said first side and in electrical contact with each said first electrode;

a second transient liquid phase sintering compatible material on said second side and in electrical contact with each said second electrode;

an electronic element comprising;

a first external termination comprising a third transient liquid phase sintering compatible material on said first external termination; and

a second external termination comprising a fourth transient liquid phase sintering compatible material on said second external termination; and

a metallurgical bond between said first transient liquid phase sintering compatible material and said third transient liquid phase sintering compatible material.

2. The electronic component stack of claim 1 further comprising a conductive layer between at least one of said first side and said first transient liquid phase sintering conductive layer or between said first external termination and said third transient liquid phase sintering compatible material.

3. The electronic component stack of claim 2 wherein at least one of said first layer of transient liquid phase sintering compatible material or said third transient liquid phase sintering compatible material comprises at least one low melting point metal selected from indium, tin, antimony, bismuth, cadmium, zinc, gallium, tellurium, mercury, thallium, selenium, or polonium, lead.

4. The electronic component stack of claim 2 wherein said conductive layer comprises a high temperature metal selected from the group consisting of silver, copper, aluminum, gold, platinum, palladium, beryllium, rhodium, nickel, cobalt, iron and molybdenum.

5. The electronic component stack of claim 2 wherein said conductive layer comprises nickel plated with an element selected from the group consisting of Ag, Sn, Au or SnPb.

6. The electronic component stack of claim 1 wherein said multilayered ceramic capacitor further comprising an external termination.

7. The electronic component stack of claim 6 wherein at least one of said external termination or said first external termination comprises nickel plated with an element selected from the group consisting of Ag, Sn, Au or SnPb.

8. The electronic component stack of claim 1 further comprising a lead frame.

9. The electronic component stack of claim 8 wherein at least one of said first transient liquid phase sintering compatible material or said third transient liquid phase sintering material comprises a low melting metal where said low melting metal is diffused into said lead frame.

10. The electronic component stack of claim 9 wherein said low melting metal is also diffused into said first electrodes.

11. The electronic component stack of claim 8 wherein at least one of said first transient liquid phase sintering compatible material or said third transient liquid phase sintering compatible material further comprises a high melting metal.

12. A electronic component stack of claim 1 wherein said first transient sintering conductive layer further comprises a non-metallic filler.

13. The electronic component stack of claim 12 wherein said non-metallic filler is glass frit.

14. The electronic component stack of claim 1 further comprising a first lead frame in electrical contact with said first transient liquid phase sintering compatible material and said third transient liquid phase sintering compatible material.

15. The electronic component stack of claim 14 wherein said first lead frame comprises a material selected from the group consisting of phosphor bronze, copper, and ferrous alloys.

16. The electronic component stack of claim 15 wherein said first lead frame comprises a lead frame surface finish of Cu, Ag, Sn, Au, Ni, or Pb.

17. The electronic component stack of claim 14 wherein said first lead frame comprises a material selected from the group consisting beryllium copper, Cu194 and Cu192.

18. The electronic component stack of claim 17 wherein said first lead frame comprises a lead frame surface finish of Cu, Ag, Sn, Au, Ni, or Pb.

19. The electronic component stack of claim 14 wherein said first lead comprises a material selected from the group consisting of alloys of copper, Alloy 42 and Kovar.

20. The electronic component stack of claim 19 wherein said first lead frame comprises a lead frame surface finish of Cu, Ag, Sn, Au, Ni, or Pb.

21. The electronic component stack of claim 1 wherein at least one of said first transient liquid phase sintering compatible material or said third first transient liquid phase sintering compatible material comprises a low melting metal and a high melting metal.

22. The electronic component stack of claim 21 wherein said low melting metal is diffused into both said high melting metal and said first electrodes.

23. The electronic component stack of claim 21 wherein said low melting metal is selected from the group consisting of indium, tin, antimony, bismuth, cadmium, zinc, gallium, tellurium, mercury, thallium, selenium, polonium and lead.

24. The electronic component stack of claim 21 wherein said high melting metal is selected from the group consisting of silver, copper, aluminum, gold, platinum, palladium, beryllium, rhodium, nickel, cobalt, iron and molybdenum.

25. The electronic component stack of claim 21 wherein said low melting metal is selected from the group consisting of indium, tin or bismuth and said high melting metal is selected from the group consisting of silver, copper or nickel.

26. The electronic component stack of claim 1 further comprising an insulator between adjacent multilayered ceramic capacitors.

27. The electronic component stack of claim 1 further comprising a sacrificial chip.

28. The stacked electronic component of claim 1 wherein said electronic element is selected from the group consisting of resistor, varistor, inductor, diode, fuse, overvoltage discharge device, sensor, switch, electrostatic discharge suppressor, semiconductor and integrated circuit.

29. The stacked electronic component of claim 28 wherein said electronic element is selected from the group consisting of resistor, varistor, inductor, diode, fuse, overvoltage discharge device, sensor, switch, electrostatic discharge suppressor and integrated circuit.

30. The electronic component stack of claim 1 further comprising a microphonic noise reduction structure.

31. The electronic component stack of claim 30 wherein said microphonic noise reduction structure is a shock absorbing conductor.

32. The electronic component stack of claim 31 wherein said shock absorbing conductor comprises a shape comprising offset mounting tabs with a space there between coupled with at least one flexible stress relieving portion.