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Interface engineering for high capacitance capacitor for liquid crystal display

  • US 10,381,454 B2
  • Filed: 01/20/2017
  • Issued: 08/13/2019
  • Est. Priority Date: 02/05/2016
  • Status: Active Grant
First Claim
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1. A thin film transistor structure comprising:

  • a capacitor formed in a thin film transistor device, the capacitor further comprising;

    a gate electrode disposed overlying a substrate;

    a common electrode disposed overlying the gate electrode;

    a dielectric layer formed on the common electrode, wherein the dielectric layer includes a bulk dielectric material sandwiched between a top interface protection layer and a bottom interface protection layer; and

    a pixel electrode formed on the dielectric layer, the top interface protection layer formed in contact with the pixel electrode and the bottom interface protection layer formed in contact with the common electrode.

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