Semiconductor device and display device including the semiconductor device

• US 10,381,486 B2
• Filed: 07/26/2016
• Issued: 08/13/2019
• Est. Priority Date: 07/30/2015
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koezuka, Junichi, Okazaki, Kenichi, Jintyou, Masami, Iguchi, Takahiro, Goto, Naoto
• Primary Examiner(s): Kim, Tong-Ho
• Application Number:
  US15/219,396
• Publication Number:
  US 20170033233A1
• Time in Patent Office: 1,113 Days
• Field of Search: 257 43
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: G06F 1/1643 the display being associated to a digitizer, e.g. laptops that can be used as penpads details related to the relative motion of the display enclosure with respect to the body enclosure, e.g. to move between laptop and tablet PC configuration G06F1/1615
• CPC Class Codes: G06F 1/169 the I/O peripheral being an integrated pointing device, e.g. trackball in the palm rest area, mini-joystick integrated between keyboard keys, touch pads or touch stripes G06F1/1643 takes precedence; constructional details of pointing devices G06F3/033
• CPC Class Codes: G06F 2203/04102 Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
• CPC Class Codes: G06F 2203/04103 Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
• CPC Class Codes: G06F 3/0412 Digitisers structurally integrated in a display
• CPC Class Codes: G06F 3/0443 using a single layer of sensing electrodes
• CPC Class Codes: G06F 3/0446 using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/14616 characterised by the channel of the transistor, e.g. channel having a doping gradient
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 : the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 : characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10B 99/00 : Subject matter not provided for in other groups of this subclass

Abstract

In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a gate electrode over the second insulating film; a metal oxide film in contact with a side surface of the second insulating film; and a third insulating film over the oxide semiconductor film, the gate electrode, and the metal oxide film. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

Claims

1. A semiconductor device comprising:

a transistor comprising;

an oxide semiconductor film over a first insulating film;

a second insulating film over the oxide semiconductor film;

a gate electrode over the second insulating film;

a metal oxide film in contact with a side surface of the second insulating film and a side surface of the gate electrode; and

a third insulating film over the oxide semiconductor film, the gate electrode, and the metal oxide film,

wherein the oxide semiconductor film comprises a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film,

wherein each of the source region and the drain region comprises any one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium and a rare gas, and

wherein the first insulating film is in contact with the metal oxide film in a channel width direction of the transistor.

2. The semiconductor device according to claim 1,

wherein the transistor further comprises:

a fourth insulating film over the third insulating film;

a source electrode connected to the source region through a first opening in the third insulating film and the fourth insulating film; and

a drain electrode connected to the drain region through a second opening in the third insulating film and the fourth insulating film.

3. The semiconductor device according to claim 1, wherein the metal oxide film comprises one or more of Al, Ta, Y and Hf.

4. The semiconductor device according to claim 1, wherein the rare gas comprises one or more of helium, neon, argon, krypton and xenon.

5. The semiconductor device according to claim 1, wherein the third insulating film comprises one or more of nitrogen, hydrogen and fluorine.

6. The semiconductor device according to claim 1,

wherein the oxide semiconductor film comprises In, Zn and M, and

wherein M is any one of Al, Ga, Y and Sn.

7. The semiconductor device according to claim 1,

wherein the oxide semiconductor film comprises a crystal part, and

wherein the crystal part has c-axis alignment.

8. A display device comprising:

the semiconductor device according to claim 1; and

a display element.

9. A display module comprising:

the display device according to claim 8; and

a touch sensor.

10. An electronic device comprising:

the display device according to claim 8; and

an operation key or a battery.

11. The semiconductor device according to claim 1, wherein the metal oxide film is between the second insulating film and the third insulating film.

12. A semiconductor device comprising:

a transistor comprising;

a conductive film;

a first insulating film over the conductive film;

an oxide semiconductor film over the first insulating film;

a second insulating film over the oxide semiconductor film;

a gate electrode over the second insulating film;

a metal oxide film in contact with a side surface of the second insulating film and a side surface of the gate electrode; and

a third insulating film over the oxide semiconductor film, the gate electrode, and the metal oxide film,

wherein the oxide semiconductor film comprises a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film,

wherein each of the source region and the drain region comprises any one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium and a rare gas, and

wherein the first insulating film is in contact with the metal oxide film in a channel width direction of the transistor.

13. The semiconductor device according to claim 12, wherein the conductive film is electrically connected to the gate electrode.

14. The semiconductor device according to claim 12,

wherein the transistor further comprises:

a fourth insulating film over the third insulating film;

a source electrode connected to the source region through a first opening in the third insulating film and the fourth insulating film; and

a drain electrode connected to the drain region through a second opening in the third insulating film and the fourth insulating film.

15. The semiconductor device according to claim 12, wherein the metal oxide film comprises one or more of Al, Ta, Y and Hf.

16. The semiconductor device according to claim 12, wherein the rare gas comprises any one or more of helium, neon, argon, krypton and xenon.

17. The semiconductor device according to claim 12, wherein the third insulating film comprises one or more of nitrogen, hydrogen and fluorine.

18. The semiconductor device according to claim 12,

wherein the oxide semiconductor film comprises In, Zn and M, and

wherein M is any one of Al, Ga, Y and Sn.

19. The semiconductor device according to claim 12,

wherein the oxide semiconductor film comprises a crystal part, and

wherein the crystal part has c-axis alignment.

20. A display device comprising:

the semiconductor device according to claim 12; and

a display element.

21. A display module comprising:

the display device according to claim 20; and

a touch sensor.

22. An electronic device comprising:

the display device according to claim 20; and

an operation key or a battery.

23. The semiconductor device according to claim 12, wherein the metal oxide film is between the second insulating film and the third insulating film.

24. A semiconductor device comprising:

a transistor comprising;

an oxide semiconductor film over a first insulating film;

a second insulating film over the oxide semiconductor film;

a gate electrode over the second insulating film;

a metal oxide film in contact with a side surface of the second insulating film and a side surface of the gate electrode; and

a third insulating film over the oxide semiconductor film, the gate electrode, and the metal oxide film,

wherein the oxide semiconductor film comprises a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film, and

wherein the first insulating film is in contact with the metal oxide film in a channel width direction of the transistor.

25. The semiconductor device according to claim 24, wherein the third insulating film comprises one or more of nitrogen, hydrogen and fluorine.

26. The semiconductor device according to claim 24, wherein the side surface of the second insulating film and the side surface of the gate electrode are aligned with each other.

27. The semiconductor device according to claim 24, wherein the metal oxide film is not in contact with a top surface of the gate electrode.

28. The semiconductor device according to claim 24, wherein the third insulating film is in contact with the metal oxide film and a top surface of the gate electrode.

29. The semiconductor device according to claim 24, wherein the metal oxide film is between the second insulating film and the third insulating film.