Photodetecting device and method of using the same

• US 10,381,495 B2
• Filed: 12/03/2015
• Issued: 08/13/2019
• Est. Priority Date: 08/04/2015
• Status: Active Grant

• Current Assignee: National Chiao Tung University (Government of The Republic of China)
• Original Assignee: National Chiao Tung University (Government of The Republic of China)
• Inventors: Yang, Yuh-Shyong, Chen, Chien-Hung, Lin, Chih-Heng
• Primary Examiner(s): Menon, Krishnan S
• Assistant Examiner(s): Gerido, Dwan A
• Application Number:
  US14/958,917
• Publication Number:
  US 20170040485A1
• Time in Patent Office: 1,349 Days
• CPC Class Codes: H01L 31/02162 for filtering or shielding light, e.g. multicolour filters for photodetectors
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/035227 the quantum structure being quantum wires, or nanorods carbon nanotubes H10K85/211
• CPC Class Codes: H01L 31/03685 including microcrystalline silicon, uc-Si
• CPC Class Codes: H01L 31/1129 the device being a field-effect phototransistor
• CPC Class Codes: H01L 31/1136 the device being a metal-insulator-semiconductor field-effect transistor

Abstract

A photodetecting device and method of using the same are provided. The photodetecting device includes a transistor, a silicon nano-channel and a filter dye layer. The transistor includes a source, a drain and a gate. The silicon nano-channel connects the source and the drain, and is configured to receive light. The filter dye layer is over a light-receiving surface of the silicon nano-channel.

Claims

1. A photodetecting device, comprising:

a transistor comprising a source, a drain and a gate;

a polycrystalline silicon nano-channel layer connecting the source and the drain, wherein the polycrystalline silicon nano-channel layer has a light-receiving surface;

an optical filter layer over the light-receiving surface of the polycrystalline silicon nano-channel layer, wherein the optical filter layer transmits a light within a wavelength range;

an isolation layer between the gate and the polycrystalline silicon nano-channel layer; and

a solution covering the source, the drain and the optical filter layer and wrapping around the gate.

2. The photodetecting device of claim 1, wherein the width of the polycrystalline silicon nano-channel layer is about 50-100 nm.

3. The photodetecting device of claim 1, wherein the thickness of the polycrystalline silicon nano-channel layer is about 1-100 nm.

4. A photodetecting device, comprising:

a transistor comprising a source, a drain and a gate;

two polycrystalline silicon nano-channel layers on opposite sides of the gate and connecting the source and the drain, wherein each of the polycrystalline silicon nano-channel layer has a light-receiving surface;

two optical filter layers over the light-receiving surfaces of the polycrystalline silicon nano-channel layers, wherein the optical filter layers transmit a light within a wavelength range; and

an isolation layer between the polycrystalline silicon nano-channel layers, and surrounding the gate.