Method of forming micro electromechanical system sensor

• US 10,384,933 B2
• Filed: 07/07/2017
• Issued: 08/20/2019
• Est. Priority Date: 12/20/2013
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Cheng, Chun-wen, Tsai, Hung-Chia, Chao, Lan-Lin, Hsieh, Yuan-Chih, Liu, Ping-Yin
• Primary Examiner(s): Chin, Edward
• Application Number:
  US15/643,536
• Publication Number:
  US 20170313581A1
• Time in Patent Office: 774 Days
• Field of Search: 257E21158, 257414, 257415, 438669
• CPC Class Codes: B81B 2201/0242 Gyroscopes
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate

Abstract

A method of making a micro electromechanical system (MEMS) package includes patterning a substrate to form a MEMS section. The method further includes bonding a carrier to a surface of the substrate. The carrier is free of active devices. The carrier includes a carrier bond pad on a surface of the carrier opposite the MEMS section. The carrier bond pad is electrically connected to the MEMS section. The method further includes bonding a wafer bond pad of an active circuit wafer to the carrier bond pad. The bonding of the wafer bond pad to the carrier bond pad includes re-graining the wafer bond pad to form at least one grain boundary extending from the wafer bond pad to the carrier bond pad.

Claims

1. A method of making a micro electromechanical system (MEMS) package, the method comprising:

patterning a substrate to form a MEMS section;

bonding a carrier to a surface of the substrate, wherein the carrier is free of active devices, wherein the carrier includes a carrier bond pad on a surface of the carrier opposite the MEMS section, and the carrier bond pad is electrically connected to the MEMS section; and

bonding a wafer bond pad of an active circuit wafer to the carrier bond pad, wherein the bonding of the wafer bond pad to the carrier bond pad comprises re-graining the wafer bond pad to form at least one grain boundary extending from the wafer bond pad to the carrier bond pad.

2. The method of claim 1, further comprising forming a conductive plug through the carrier, wherein the conductive plug is connected to the bond pad, and the conductive plug comprises tungsten.

3. The method of claim 1, further comprising forming an isolation trench extending through the carrier, wherein the isolation trench surrounds the carrier bond pad, and the carrier bond pad is configured to receive a signal through the carrier between the isolation trench.

4. The method of claim 1, wherein the bonding of the wafer bond pad to the carrier bond pad comprises electrically connecting an interconnect structure to the carrier bond pad, and the interconnect structure is configured to convey signals to and from active devices in the active circuit wafer.

5. The method of claim 1, wherein the bonding of the wafer bond pad to the carrier bond pad comprises performing a semiconductor-oxide fusion bonding.

6. The method of claim 1, wherein the bonding of the wafer bond pad to the carrier bond pad comprises performing an oxide-oxide fusion bonding.

7. A method of making a micro electromechanical system (MEMS) package, the method comprising:

patterning a substrate to form a MEMS section;

bonding a carrier to a surface of the substrate, wherein the carrier is free of active devices;

forming a carrier bond pad electrically connected to the MEMS section through the carrier; and

fusion bonding a wafer bond pad to the carrier bond pad, wherein the fusion bonding of the wafer bond pad to the carrier bond pad comprises forming a grain boundary extending across an interface of the wafer bond pad and the carrier bond pad.

8. The method of claim 7, wherein the forming of the carrier bond pad comprises embedding the carrier bond pad in a semiconductor material of the carrier.

9. The method of claim 7, further comprising depositing an oxide layer over a surface of the carrier opposite the MEMS section.

10. The method of claim 9, wherein the forming of the carrier bond pad comprises:

forming an opening in the oxide layer; and

depositing a conductive material in the opening.

11. The method of claim 7, further comprising forming a conductive plug in the carrier electrically connected to the MEMS section.

12. The method of claim 11, wherein the forming of the carrier bond pad comprises forming the carrier bond pad electrically connected to the conductive plug.

13. The method of claim 7, further comprising forming an isolation feature in the carrier, wherein the forming of the carrier bond pad comprises forming the carrier bond pad in a portion of the carrier surrounded by the isolation feature.

14. The method of claim 7, wherein the fusion bonding of the carrier bond pad to the wafer bond pad comprises aligning an edge of the carrier bond pad with an edge of the wafer bond pad.

15. The method of claim 7, wherein the fusion bonding of the carrier bond pad to the wafer bond pad comprises semiconductor-oxide fusion bonding.

16. A method of making a micro electromechanical system (MEMS) package, the method comprising:

bonding a carrier to a surface of a MEMS section, wherein the carrier is free of active devices;

forming an isolation feature extended from an uppermost surface of the carrier to a lowermost surface of the carrier;

embedding a carrier bond pad in the carrier, wherein the carrier bond pad is in an area of the carrier surrounded by the isolation feature, and the carrier bond pad is electrically connected to the MEMS section through a semiconductor material of the carrier; and

fusion bonding a wafer bond pad to the carrier bond pad, wherein the fusion bonding of the wafer bond pad to the carrier bond pad comprises forming a grain boundary extending across an interface of the wafer bond pad and the carrier bond pad.

17. The method of claim 16, further comprising depositing an oxide layer over a surface of the carrier opposite the MEMS section.

18. The method of claim 16, further comprising eutectic bonding a cap to the MEMS section opposite the carrier.

19. The method of claim 16, wherein the fusion bonding of the wafer bond pad to the carrier bond pad comprises oxide-oxide fusion bonding.

20. The method of claim 17, wherein the embedding of the carrier bond pad comprises embedding the carrier bond pad in the oxide layer.