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Thermal pile sensing structure integrated with capacitor

  • US 10,386,240 B2
  • Filed: 11/18/2018
  • Issued: 08/20/2019
  • Est. Priority Date: 11/12/2015
  • Status: Active Grant
First Claim
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1. A thermal pile sensing structure, comprising:

  • a substrate, having a surface plane (X-Y plane) and a normal direction (Z-direction) which is perpendicular to the surface plane;

    an infrared sensing unit located above the substrate; and

    a partition structure, which extends in the Z-direction and surrounds the infrared sensing unit at the X-Y plane;

    wherein at least one hot junction and at least one cold junction are formed by the infrared sensing unit and/or the partition structure;

    wherein a temperature difference between the hot junction and the cold junction generates a voltage difference signal and a part of the partition structure forms at least one capacitor having an upper electrode and a lower electrode, wherein the upper electrode is located at a higher level than the lower electrode in the Z-direction.

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