Tunable reactance devices, and methods of making and using the same
First Claim
1. A tunable reactance device, comprising:
- a) a substrate;
b) a first microelectromechanical (MEM) structure supported on the substrate and comprising a conductive material, wherein a first gap is between the first MEM structure and the substrate;
c) a second microelectromechanical (MEM) structure supported on the substrate and comprising the conductive material, wherein a second gap is between the second MEM structure and the substrate; and
d) one or more drivers configured to move the first MEM structure with respect to the substrate and the second MEM structure and maintain a third gap identical to or different from the first gap upon application of an electrostatic force to at least one of the one or more drivers, wherein;
the first and second MEM structures are configured to function as a variable inductor, and the tunable reactance device has (i) a first reactance and a first electromagnetic field topology when the electrostatic force is applied to the at least one of the one or more drivers and (ii) a second reactance different from the first reactance and a second electromagnetic field topology different from the first electromagnetic field topology when a different electrostatic force is applied to the one or more drivers.
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Abstract
A tunable reactance device and methods of manufacturing and using the same are disclosed. The tunable reactance device includes a substrate, a microelectromechanical (MEM) structure supported on the substrate and comprising a conductive material, and a driver configured to move the MEM structure with respect to the substrate upon application of an electrostatic force to the driver. A gap between the MEM structure and the substrate is maintained when the driver moves the MEM structure. The tunable reactance device has (i) a first reactance and a first electromagnetic field topology when the electrostatic force is applied to the driver and (ii) a different reactance and a different electromagnetic field topology when a different electrostatic force is applied to the driver.
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Citations
20 Claims
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1. A tunable reactance device, comprising:
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a) a substrate; b) a first microelectromechanical (MEM) structure supported on the substrate and comprising a conductive material, wherein a first gap is between the first MEM structure and the substrate; c) a second microelectromechanical (MEM) structure supported on the substrate and comprising the conductive material, wherein a second gap is between the second MEM structure and the substrate; and d) one or more drivers configured to move the first MEM structure with respect to the substrate and the second MEM structure and maintain a third gap identical to or different from the first gap upon application of an electrostatic force to at least one of the one or more drivers, wherein; the first and second MEM structures are configured to function as a variable inductor, and the tunable reactance device has (i) a first reactance and a first electromagnetic field topology when the electrostatic force is applied to the at least one of the one or more drivers and (ii) a second reactance different from the first reactance and a second electromagnetic field topology different from the first electromagnetic field topology when a different electrostatic force is applied to the one or more drivers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A tunable reactance device, comprising:
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a) a substrate; b) a first microelectromechanical (MEM) structure supported on the substrate and comprising a conductive material, a first main electrode and a first plurality of finger structures extending orthogonally from the first main electrode, wherein a first gap is between the first MEM structure and the substrate; c) a second microelectromechanical (MEM) structure supported on the substrate and comprising the conductive material, a second main electrode and a second plurality of finger structures extending orthogonally from the second main electrode, wherein a second gap is between the second MEM structure and the substrate; and d) one or more drivers configured to (i) move the first MEM structure with respect to the substrate and the second MEM structure and (ii) maintain a second gap identical to or different from the first gap upon application of an electrostatic force to at least one of the one or more drivers, wherein; the first and second MEM structures are configured to function as a variable capacitor, and the tunable reactance device has (i) a first reactance and a first electromagnetic field topology when the electrostatic force is applied to the at least one of the one or more drivers and (ii) a second reactance different from the first reactance and a second electromagnetic field topology different from the first electromagnetic field topology when a different electrostatic force is applied to the one or more drivers. - View Dependent Claims (17, 18)
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19. A tunable reactance device, comprising:
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a) a substrate including an electrode; b) a first microelectromechanical (MEM) structure supported on the substrate and comprising a conductive material, wherein a first gap is between the first MEM structure and the substrate, the electrode underlies or overlaps with the first MEM structure, and the first MEM structure comprises a moveable beam; and c) one or more drivers comprising a first plurality of lever arms connected to the first MEM structure at opposed ends of the moveable beam configured to move the first MEM structure with respect to the substrate and maintain a second gap identical to or different from the first gap upon application of an electrostatic force to at least one of the one or more drivers, wherein; the tunable reactance device functions as a variable capacitor, and has (i) a first reactance and a first electromagnetic field topology when the electrostatic force is applied to the at least one of the one or more drivers and (ii) a second reactance different from the first reactance and a second electromagnetic field topology different from the first electromagnetic field topology when a different electrostatic force is applied to the one or more drivers. - View Dependent Claims (20)
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Specification