Formation of epitaxial layers via dislocation filtering
First Claim
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1. A process for forming an epitaxial film on a substrate, comprising:
- providing a reaction chamber, the reaction chamber enclosing a substrate to be processed;
forming a buffer layer on the substrate;
forming a sacrificial layer on top of the buffer layer; and
forming a bulk layer on top of the sacrificial layer, wherein the bulk layer comprises at least one of germanium-tin or silicon-germanium-tin;
wherein the sacrificial layer comprises at least one dislocation caused by an interfacial strain;
wherein the bulk layer is substantially free from dislocations caused by an interfacial strain; and
wherein the bulk layer and the sacrificial layer comprise the same material having the same chemical formula.
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Abstract
A process for forming a thick defect-free epitaxial layer is disclosed. The process may comprise forming a buffer layer and a sacrificial layer prior to forming the thick defect-free epitaxial layer. The sacrificial layer and the thick defect-free epitaxial layer may be formed of the same material and at the same process conditions.
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16 Claims
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1. A process for forming an epitaxial film on a substrate, comprising:
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providing a reaction chamber, the reaction chamber enclosing a substrate to be processed; forming a buffer layer on the substrate; forming a sacrificial layer on top of the buffer layer; and forming a bulk layer on top of the sacrificial layer, wherein the bulk layer comprises at least one of germanium-tin or silicon-germanium-tin; wherein the sacrificial layer comprises at least one dislocation caused by an interfacial strain; wherein the bulk layer is substantially free from dislocations caused by an interfacial strain; and wherein the bulk layer and the sacrificial layer comprise the same material having the same chemical formula. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A process for forming an epitaxial film on a substrate, comprising:
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providing a reaction chamber, the reaction chamber enclosing a substrate to be processed; forming a buffer layer on the substrate; forming a first dislocation filtering layer on top of the buffer layer; forming a first bulk layer comprising at least one of germanium-tin or silicon-germanium-tin on top of the first dislocation filtering layer; forming a second dislocation filtering layer on top of the first bulk layer; and forming a second bulk layer on top of the second dislocation filtering layer; wherein the first dislocation filtering layer and the second dislocation filtering layer comprise at least one dislocation caused by an interfacial strain; wherein the first bulk layer and the second bulk layer are substantially free from dislocations caused by an interfacial strain; and wherein the first dislocation filtering layer, the first bulk layer, the second dislocation filtering layer, and the second bulk layer all comprise the same material having the same chemical formula.
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Specification