Apparatus for UV flowable dielectric

• US 10,388,546 B2
• Filed: 11/16/2015
• Issued: 08/20/2019
• Est. Priority Date: 11/16/2015
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Mohn, Jonathan D., Ndiege, Nicholas Muga, Van Cleemput, Patrick A., Chen, David Fang Wei, Liang, Wenbo, Hamilton, Shawn M.
• Primary Examiner(s): Moore, Karla A
• Application Number:
  US14/942,703
• Publication Number:
  US 20170137943A1
• Time in Patent Office: 1,373 Days
• Field of Search: None
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/44 characterised by the method of coating C23C16/04 takes precedence
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/67103 mainly by conduction
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67225 comprising at least one lithography chamber lithographic apparatuses G03F7/00
• CPC Class Codes: H01L 21/68764 characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
• CPC Class Codes: H01L 21/68771 characterised by supporting more than one semiconductor substrate

Abstract

Provided are methods and apparatus for ultraviolet (UV) assisted capillary condensation to form dielectric materials. In some embodiments, a UV driven reaction facilitates photo-polymerization of a liquid phase flowable material. Applications include high quality gap fill in high aspect ratio structures and por sealing of a porous solid dielectric film. According to various embodiments, single station and multi-station chambers configured for capillary condensation and UV exposure are provided.

Claims

1. An apparatus comprising:

a chamber including chamber walls and a substrate support;

a showerhead having channels configured to distribute reactants to the chamber;

an ultraviolet radiation source embedded within or mounted to the showerhead;

a heating system configured to heat an inner surface of the chamber walls;

a cooling system configured to cool the substrate support;

and

a controller comprising machine readable instructions for concurrently performing;

introducing a vapor phase cyclic silicon precursor to the chamber via the showerhead at a substrate support temperature less than the boiling point of the cyclic silicon precursor to thereby form a flowable film on a substrate supported by the substrate support;

powering the ultraviolet radiation source to expose the flowable film to UV radiation; and

maintaining the substrate support at a temperature less than the boiling point of the cyclical silicon precursor during the exposure.

2. The apparatus of claim 1, wherein the chamber is a single-station chamber.

3. The apparatus of claim 1, wherein the chamber is a multi-station chamber.

4. The apparatus of claim 1, further comprising a plurality of ultraviolet radiation sources evenly distributed across the showerhead.

5. The apparatus of claim 1, wherein the substrate support is rotatable.

6. The apparatus of claim 5, further comprising instructions for rotating the substrate support while exposing the chamber to UV radiation.

7. The apparatus of claim 1, wherein the cyclic silicon precursor is a cyclic silazane or cyclic siloxane.

8. The apparatus of claim 1, wherein the cyclic silicon precursor is octamethylcyclotetrasiloxane,tetravinyltetramethylcyclotetrasiloxane, tetramethylcyclotetrasiloxane, pentamethylcyclopentasiloxane, or hexamethylcyclotrisiloxane.

9. The apparatus of claim 1, wherein the instructions further comprise instructions for heating the chamber walls.