Nanosheet devices with different types of work function metals
First Claim
1. A method of fabricating a semiconductor device, the method comprising:
- forming a first work function metal in a first stack and a second stack, the first stack and the second stack each comprising two or more nanowires separated by the first work function metal;
forming a mask on the first stack such that the first work function metal in the first stack is protected while the first work function metal in the second stack is exposed;
undercutting the mask by removing a portion of the first work function metal in the first stack, such that a gap remains at a location where the portion is removed;
forming a plug in the gap underneath the mask at the location so as to protect the first work function metal in the first stack;
removing the first work function metal in the second stack, thereby removing the first work function metal from in between the two or more nanowires of the second stack;
removing the mask and the plug from the first stack; and
forming a second work function metal on the first stack and the second stack.
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Accused Products
Abstract
A technique relates to a semiconductor device. A first work function metal is in first stack and second stacks, each having nanowires separated by the first work function metal. A mask is on the first stack such that the first work function metal in the first stack is protected while the first work function metal in the second stack is exposed. The mask is undercut by removing a portion of first work function metal in first stack, leaving a gap. A plug is formed in the gap underneath the mask so as to protect the first work function metal in first stack. First work function metal in the second stack is removed, thereby removing the first work function metal from in between the nanowires of the second stack. The mask and plug are removed from first stack. A second work function metal is formed on first and second stacks.
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Citations
19 Claims
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1. A method of fabricating a semiconductor device, the method comprising:
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forming a first work function metal in a first stack and a second stack, the first stack and the second stack each comprising two or more nanowires separated by the first work function metal; forming a mask on the first stack such that the first work function metal in the first stack is protected while the first work function metal in the second stack is exposed; undercutting the mask by removing a portion of the first work function metal in the first stack, such that a gap remains at a location where the portion is removed; forming a plug in the gap underneath the mask at the location so as to protect the first work function metal in the first stack; removing the first work function metal in the second stack, thereby removing the first work function metal from in between the two or more nanowires of the second stack; removing the mask and the plug from the first stack; and forming a second work function metal on the first stack and the second stack. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of fabricating a semiconductor device, the method comprising:
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providing a first stack and a second stack each having a first work function metal, wherein a mask covers the first stack and a plug is adjacent to both the mask and the first work function metal of the first stack; removing the first work function metal from the second stack, while the first work function metal of the first stack is protected by the mask and the plug; removing the mask and the plug; and forming a second work function metal on the first stack and the second stack. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification