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Semiconductor device and method of forming flipchip interconnect structure

  • US 10,388,626 B2
  • Filed: 11/16/2010
  • Issued: 08/20/2019
  • Est. Priority Date: 03/10/2000
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, comprising:

  • providing a semiconductor die including a plurality of interconnect structures formed over a surface of the semiconductor die;

    providing a substrate;

    forming a plurality of conductive traces with interconnect sites disposed at intermediate locations along a length of the conductive traces over the substrate with the conductive traces extending in opposite directions from the interconnect sites;

    forming a plurality of individual non-conductive masking patches over an area of the substrate interstitial between and physically separated from the interconnect sites, wherein the interconnect structures including a width substantially the same as a width of the conductive traces away from the interconnect sites and wider than the interconnect sites;

    bonding the interconnect structures to the interconnect sites absent a mask opening so that the interconnect structures cover a top surface and side surfaces of the interconnect sites; and

    depositing an encapsulant around the interconnect structures between the semiconductor die and substrate.

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