Semiconductor device and method of forming flipchip interconnect structure
First Claim
1. A method of making a semiconductor device, comprising:
- providing a semiconductor die including a plurality of interconnect structures formed over a surface of the semiconductor die;
providing a substrate;
forming a plurality of conductive traces with interconnect sites disposed at intermediate locations along a length of the conductive traces over the substrate with the conductive traces extending in opposite directions from the interconnect sites;
forming a plurality of individual non-conductive masking patches over an area of the substrate interstitial between and physically separated from the interconnect sites, wherein the interconnect structures including a width substantially the same as a width of the conductive traces away from the interconnect sites and wider than the interconnect sites;
bonding the interconnect structures to the interconnect sites absent a mask opening so that the interconnect structures cover a top surface and side surfaces of the interconnect sites; and
depositing an encapsulant around the interconnect structures between the semiconductor die and substrate.
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Accused Products
Abstract
A semiconductor device has a semiconductor die with a plurality of bumps or interconnect structures formed over an active surface of the die. The bumps can have a fusible portion and non-fusible portion, such as a conductive pillar and bump formed over the conductive pillar. A plurality of conductive traces with interconnect sites is formed over a substrate. The bumps are wider than the interconnect sites. A masking layer is formed over an area of the substrate away from the interconnect sites. The bumps are bonded to the interconnect sites under pressure or reflow temperature so that the bumps cover a top surface and side surfaces of the interconnect sites. An encapsulant is deposited around the bumps between the die and substrate. The masking layer can form a dam to block the encapsulant from extending beyond the semiconductor die. Asperities can be formed over the interconnect sites or bumps.
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Citations
35 Claims
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1. A method of making a semiconductor device, comprising:
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providing a semiconductor die including a plurality of interconnect structures formed over a surface of the semiconductor die; providing a substrate; forming a plurality of conductive traces with interconnect sites disposed at intermediate locations along a length of the conductive traces over the substrate with the conductive traces extending in opposite directions from the interconnect sites; forming a plurality of individual non-conductive masking patches over an area of the substrate interstitial between and physically separated from the interconnect sites, wherein the interconnect structures including a width substantially the same as a width of the conductive traces away from the interconnect sites and wider than the interconnect sites; bonding the interconnect structures to the interconnect sites absent a mask opening so that the interconnect structures cover a top surface and side surfaces of the interconnect sites; and depositing an encapsulant around the interconnect structures between the semiconductor die and substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of making a semiconductor device, comprising:
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providing a semiconductor die including an interconnect structure formed over a surface of the semiconductor die; providing a substrate; forming a conductive trace with an interconnect site disposed at an intermediate location along the conductive trace over the substrate with the conductive trace extending in opposite directions from the interconnect site, the interconnect site being narrower than the interconnect structure; forming a plurality of individual non-conductive masking patches over an area of the substrate interstitial around and physically separated from the interconnect site; and bonding the interconnect structure to the interconnect site absent a mask opening so that the interconnect structure covers a top surface and side surfaces of the interconnect site. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device, comprising:
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a semiconductor die including a plurality of interconnect structures formed over a surface of the semiconductor die; a substrate; a plurality of conductive traces with interconnect sites disposed at intermediate locations along a length of the conductive traces formed over the substrate with the conductive traces extending in opposite directions from the interconnect sites, the interconnect sites including a width substantially the same as a width of the conductive traces away from the interconnect sites and narrower than the interconnect structures to increase interconnect density; a plurality of individual non-conductive masking patches formed over an area of the substrate interstitial between and physically separated from the interconnect sites, wherein the interconnect structures are bonded to the interconnect sites so that the interconnect structures cover a top surface and side surfaces of the interconnect sites; and an encapsulant deposited around the interconnect structures between the semiconductor die and substrate. - View Dependent Claims (16, 17, 18, 19)
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20. A semiconductor device, comprising:
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a substrate; a conductive trace with an interconnect site disposed at an intermediate location along the conductive trace formed over the substrate with the conductive trace extending in opposite directions from the interconnect site; a plurality of individual non-conductive masking patches formed over an area of the substrate interstitial around and physically separated from the interconnect site; a semiconductor die including an interconnect structure formed over a surface of the semiconductor die with the interconnect structure bonded to the interconnect site absent a mask opening so that the interconnect structure covers a top surface and side surfaces of the interconnect site; and an encapsulant deposited around the interconnect structure between the semiconductor die and substrate. - View Dependent Claims (21, 22, 23, 24, 25)
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26. A semiconductor device, comprising:
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a substrate; a conductive trace with an interconnect site disposed at an intermediate location along a length of the conductive trace formed over the substrate; a plurality of individual non-conductive masking patches formed over an area of the substrate interstitial around and physically separated from the interconnect site; and a semiconductor die including an interconnect structure formed over a surface of the semiconductor die with the interconnect structure covering a top surface and side surfaces of the interconnect site. - View Dependent Claims (27, 28, 29, 30)
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31. A semiconductor device, comprising:
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a substrate; a conductive trace including an interconnect site formed over the substrate, the interconnect site including a width substantially equal to a width of the conductive trace away from the interconnect site; a plurality of individual non-conductive masking patches formed over an area of the substrate interstitial around and physically separated from the interconnect site; and a semiconductor die including an interconnect structure disposed over the interconnect site. - View Dependent Claims (32, 33, 34, 35)
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Specification