×

Semiconductor device and method of manufacturing the same

  • US 10,388,661 B2
  • Filed: 08/21/2017
  • Issued: 08/20/2019
  • Est. Priority Date: 12/19/2016
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a tunnel insulating layer configured to enclose a channel layer;

    interlayer insulating layers stacked and configured to enclose the tunnel insulating layer;

    data storage layers disposed in respective spaces between the interlayer insulating layers and configured to enclose the tunnel insulating layer, each of the data storage layers being disposed in one side of the corresponding space adjacent to the tunnel insulating layer; and

    conductive patterns surrounding the tunnel insulating layer with the data storage layers interposed therebetween and filling the spaces,wherein the tunnel insulating layer has a first portion extending from each of the data storage layers to the channel layer in a first direction and a second portion extending from each of the interlayer insulating layers to the channel layer in the first direction, andwherein the first portion is thinner than the second portion in the first direction.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×