Light emitting diodes (LEDs) with stacked multi-color pixels for displays

• US 10,388,691 B2
• Filed: 05/18/2017
• Issued: 08/20/2019
• Est. Priority Date: 05/18/2016
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Banna, Srinivasa, Nayak, Deepak, Jacob, Ajey P.
• Primary Examiner(s): Ho, Anthony
• Assistant Examiner(s): Quinto, Kevin
• Application Number:
  US15/599,427
• Publication Number:
  US 20170338275A1
• Time in Patent Office: 824 Days
• Field of Search: None
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A color stacked light emitting diode (LED) pixel is disclosed. The color stacked LED includes an LED pixel structure body, a base LED disposed on at least a portion of the LED pixel structure body, an intermediate LED disposed on the base LED, and a top LED disposed on the intermediate LED. The stacked LED may be an overlapping or a non-overlapping LED pixel. The LED pixel structure body may be a fin body or a nanowire body.

Claims

1. A device comprising:

a substrate having a device well; and

a color stacked light emitting diode (LED) pixel disposed on the substrate, the color stacked LED pixel including an LED pixel structure body, a base LED disposed over at least a portion of the LED pixel structure body, an intermediate LED disposed over the base LED, and a top LED disposed over the intermediate LED,

wherein the LED pixel structure body serves as a cathode terminal for the base LED, and the LED pixel structure body is a fin body or a nanowire body.

2. The device of claim 1 wherein the base LED, the intermediate LED, and the top LED further comprises a base multiple quantum well (MQW), an intermediate MQW, and a top MQW respectively, the MQWs comprises at least an In_xGa_x-1N layer and a GaN layer, where x is the atomic percentage of In in the In_xGa_x-1N layer, and the MQWs have different bandgaps by varying x of the In_xGa_x-1N layer in the base LED, the intermediate LED, and the top LED.

3. The device of the claim 1 wherein the color stacked LED pixel is an overlapping stacked LED pixel in which the base LED overlaps with at least a portion of the LED pixel structure body, the intermediate LED overlaps with at least a portion of the base LED, and the top LED overlaps with at least a portion of the intermediate LED.

4. The device of the claim 3 wherein the base LED is a blue LED, the intermediate LED is a green LED, and the top LED is a red LED.

5. The device of the claim 1 wherein the color stacked LED pixel is a non-overlapping stacked LED in which the base LED is disposed over a base portion of the LED pixel structure body, the intermediate LED is disposed over an intermediate portion of the LED pixel structure body, the top LED is disposed over a top portion of the LED pixel structure body, and the base LED, the intermediate LED, and the top LED are separated from each other.

6. The device of the claim 5 wherein the base LED is a blue LED, the intermediate LED is a green LED, and the top LED is a red LED.

7. A device comprising:

a substrate having a device well;

a color stacked light emitting diode (LED) pixel disposed on the substrate, the color stacked LED pixel including an LED pixel structure body, a base LED disposed over at least a portion of the LED pixel structure body, an intermediate LED disposed over the base LED, and a top LED disposed over the intermediate LED,

wherein the base LED has a cathode terminal coupled to the device well and an anode terminal coupled to a first metal level, the intermediate LED has a cathode terminal coupled to a second metal level and an anode terminal coupled to the first metal level, and the top LED has a cathode terminal coupled to the second metal level and an anode terminal coupled to a third metal level.

8. The device of claim 7 wherein the base LED further includes a base LED top layer serving as an anode terminal for the intermediate LED, and the top LED further includes a top LED base layer serving as a cathode terminal of the intermediate LED and the top LED.

9. A method of forming a device, comprising:

providing a substrate having a device well; and

forming a color stacked light emitting diode (LED) pixel disposed on the substrate, the color stacked LED pixel comprises an LED pixel structure body, a base LED disposed over at least a portion of the LED pixel structure body, an intermediate LED disposed over the base LED, and a top LED disposed over the intermediate LED,

wherein the LED pixel structure body serves as a cathode terminal for the base LED, and the LED pixel structure body is a fin body or a nanowire body.

10. The method of claim 9 wherein the base LED, the intermediate LED and the top LED further comprise a base multiple quantum well (MQW), an intermediate MQW, and a top MQW respectively, the MQWs comprise at least an In_xGa_x-1N layer and a GaN layer, where x is the atomic percentage of In in the In_xGa_x-1N layer, and the MQWs have different bandgaps by varying x of the In_xGa_x-1N layer in the base LED, the intermediate LED, and the top LED.

11. The method of claim 9 wherein the color stacked LED pixel is an overlapping stacked LED pixel, wherein the base LED overlaps with at least a portion of the LED pixel structure body, the intermediate LED overlaps with at least a portion of the base LED, and the top LED overlaps with at least a portion of the intermediate LED.

12. The method of claim 11 wherein the base LED is a blue LED, the intermediate LED is a green LED, and the top LED is a red LED.

13. The method of claim 9 wherein the color stacked LED pixel is a non-overlapping stacked LED pixel, wherein the base LED is disposed over a base portion of the LED pixel structure body, the intermediate LED is disposed over an intermediate portion of the LED pixel structure body, the top LED disposed over a top portion of the LED pixel structure body, and the base LED, the intermediate LED, and the top LED are separated from each other.

14. The method of claim 13 wherein the base LED is a blue LED, the intermediate LED is a green LED, and the top LED is a red LED.

15. A method of forming a device, comprising:

providing a substrate having a device well; and

forming a color stacked light emitting diode (LED) pixel disposed on the substrate, the color stacked LED pixel comprises an LED pixel structure body, a base LED disposed over at least a portion of the LED pixel structure body, an intermediate LED disposed over the base LED, and a top LED disposed over the intermediate LED,

wherein the base LED has a cathode terminal coupled to the device well and an anode terminal coupled to a first metal level, the intermediate LED has a cathode terminal coupled to a second metal level and an anode terminal coupled to the first metal level, and the top LED has a cathode terminal coupled to the second metal level and an anode terminal coupled to a third metal level.

16. The method of claim 15 wherein the base LED further includes a base LED top layer serving as an anode terminal for the intermediate LED, and the top LED further includes a top LED base layer serving as a cathode terminal of the intermediate LED and the top LED.