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Nanosheet field-effect transistors including a two-dimensional semiconducting material

  • US 10,388,732 B1
  • Filed: 05/30/2018
  • Issued: 08/20/2019
  • Est. Priority Date: 05/30/2018
  • Status: Active Grant
First Claim
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1. A structure for a field-effect transistor, the structure comprising:

  • a plurality of channel layers arranged in a layer stack;

    a source/drain region connected with the plurality of channel layers; and

    a gate structure including a plurality of sections that respectively surround the plurality of channel layers,wherein the plurality of channel layers are comprised of a two-dimensional semiconducting material, and the source/drain region is comprised of the two-dimensional semiconducting material.

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