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Gate contact structure positioned above an active region with air gaps positioned adjacent the gate structure

  • US 10,388,747 B1
  • Filed: 03/28/2018
  • Issued: 08/20/2019
  • Est. Priority Date: 03/28/2018
  • Status: Active Grant
First Claim
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1. An integrated circuit product, comprising:

  • a transistor device comprising a T-shaped gate structure positioned above an active region defined in a semiconducting substrate, said T-shaped gate structure comprising an upper portion and a lower portion, wherein said upper portion has a greater lateral width in a current transport direction of said transistor device than said lower portion;

    first and second conductive source/drain structures positioned adjacent opposite sidewalls of said T-shaped gate structure; and

    first and second air gaps positioned adjacent opposite sidewalls of said T-shaped gate structure, wherein each of said air gaps is positioned between at least said lower portion of said T-shaped gate structure and adjacent conductive source/drain structures.

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