Gallium nitride semiconductor structure and process for fabricating thereof

• US 10,388,752 B2
• Filed: 05/02/2018
• Issued: 08/20/2019
• Est. Priority Date: 06/20/2017
• Status: Active Grant

• Current Assignee: ELTA Systems Limited (Government of Israel)
• Original Assignee: ELTA Systems Limited (Government of Israel)
• Inventors: Kaplun, Joseph, Houli Arbiv, Bilha
• Primary Examiner(s): Yushin, Nikolay K
• Application Number:
  US15/968,810
• Publication Number:
  US 20180366558A1
• Time in Patent Office: 475 Days
• CPC Class Codes: H01L 21/02002 Preparing wafers
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/02527 Carbon, e.g. diamond-like carbon
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/66446 with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate

Abstract

A semiconductor substrate structure and process for fabrication of the semiconductor substrate structure are described. The semiconductor substrate structure includes a silicon carbide (SiC) wafer substrate, an active gallium nitride (GaN) layer and a layer of microcrystalline diamond (MCD) layer disposed between the SiC wafer substrate and the GaN active layer. The MCD) layer is bonded to the SiC wafer substrate and to the GaN active layer.

Claims

1. A process of fabrication of a semiconductor substrate structure, comprising:

(i) fabricating a first intermediate structure comprising;

a silicon carbide (SiC) wafer substrate;

a microcrystalline diamond (MCD) layer bonded to the silicon carbide (SiC) wafer substrate, the MCD layer having a first MCD surface and a second MCD surface;

a first bonding material layer disposed between the MCD layer and the silicon carbide (SiC) wafer substrate, said first bonding material layer being bonded to the SiC wafer substrate and to the first MCD surface of the first MCD layer; and

a second bonding material layer disposed on the second MCD surface of the MCD layer and having an outer surface being exposed;

(ii) fabricating a second intermediate structure comprising;

a gallium nitride (GaN) active layer, a Si carrier substrate, and an adhesive layer therebetween;

the GaN active layer having a first GaN surface bonded to the Si carrier substrate via the adhesive layer, and a second GaN surface being exposed;

(iii) bonding said first intermediate structure to said second intermediate structure, where the second GaN surface of the GaN active layer of the structure is bonded to the outer surface of the second bonding material layer;

(iv) removing the Si carrier substrate together with the adhesive layer formed between the Si carrier substrate and the first GaN surface of the GaN active layer;

thereby obtaining said semiconductor substrate structure comprising;

the SiC wafer substrate;

the GaN active layer; and

the MCD layer disposed between the SiC wafer substrate and the GaN active layer, and bonded to the SiC wafer substrate via the first bonding material layer and to the GaN active layer via the second bonding material layer.

2. The process of claim 1, wherein the bonding of the second GaN surface of the GaN active layer of the second intermediate structure to the outer surface of the second bonding material layer is by direct bonding.

3. The process of claim 1, wherein the second bonding material layer provides direct bonding to the second MCD surface of the MCD layer.

4. The process of claim 1, wherein the bonding of the second GaN surface of the GaN active layer of the second intermediate structure to the outer surface of the second bonding material layer is by adhesive bonding.

5. The process of claim 1, wherein the second bonding material layer provides adhesive bonding to the second MCD surface of the MCD layer.

6. The process of claim 1, wherein said fabricating of the second intermediate structure comprises:

providing a fourth intermediate structure comprising a gallium nitride (GaN) layer grown on a second Si host substrate, said GaN layer comprising;

the GaN active layer having a first GaN surface being exposed in the fourth intermediate structure, and

a nucleation layer grown on the second Si host substrate;

providing a Si carrier substrate and bonding said Si carrier substrate to the first GaN surface using an adhesive material forming an adhesive layer between the Si carrier substrate and the first GaN surface;

removing said second Si host substrate;

removing the nucleation layer to expose a second GaN surface of the GaN active layer; and

carrying out an edge trimming of the GaN active layer.

7. The process of claim 6, wherein the surface topographical irregularities include peaks, ridges and valleys.

8. The process of claim 1, wherein the fabricating of the first

intermediate structure comprises:

providing a first Si host wafer substrate;

growing the MCD layer on the first Si host wafer substrate, the first MCD surface and the second MCD surface of the MCD layer having surface topographical irregularities;

polishing the first MCD surface to decrease the surface topographical irregularities up to a predetermined first degree of smoothness;

forming the first bonding material layer on the first MCD surface, a surface of the bonding material layer having a predetermined second degree of smoothness smoother than the first degree of smoothness;

providing the SiC wafer substrate;

bonding the SiC wafer substrate to the MCD layer via the first bonding material layer;

removing the first Si host wafer substrate;

polishing the second MCD surface to decrease the surface topographical irregularities up to the predetermined first degree of smoothness;

forming a second bonding material layer on the second MCD surface, the surface of the second bonding material layer having the predetermined second degree of smoothness smoother than the first degree of smoothness.

9. The process of claim 8, wherein the bonding of the SiC wafer substrate to the MCD layer via the bonding material layer is by direct bonding.

10. The process of claim 8, wherein the bonding of the SiC wafer substrate to the MCD layer via the bonding material layer is by adhesive bonding.

11. The process of claim 8, wherein said predetermined first degree of smoothness is at least 2 nanometers, and said predetermined second degree of smoothness is at least 0.5 nanometers.

12. The process of claim 8, wherein the growing of the MCD layer on the first host Si wafer substrate is carried out by a chemical-vapor deposition (CVD) technique.

13. The process of claim 8, wherein said forming of the bonding material layer on the first MCD surface of the MCD layer includes:

forming a silicone oxide (SiO₂) layer having a thickness sufficient to cover the surface topographical irregularities on the first MCD surface;

carrying out annealing of the SiO₂ layer to provide hardening thereof; and

polishing a surface of the SiO₂ layer to decrease the surface topographical irregularities to the second degree of smoothness.

14. A semiconductor substrate structure comprising:

a silicon carbide (SiC) wafer substrate;

an active gallium nitride (GaN) layer;

a layer of microcrystalline diamond (MCD) layer disposed between the SiC wafer substrate and the GaN active layer, and bonded to the SiC wafer substrate and to the GaN active layer; and

a first bonding material layer for bonding the MCD layer to the SiC wafer substrate, and a second bonding material layer for bonding the MCD layer to the GaN active layer;

wherein the first bonding material layer and the second bonding material layer are made of silicone oxide (SiO₂) and provide direct bonding.

15. The semiconductor substrate structure of claim 14, wherein the GaN active layer has a thickness in the range of about 0.8 micrometers to 1.0 micrometer.

16. The semiconductor substrate structure of claim 14, wherein the MCD layer has a thickness in the range of about 5 micrometers to 95 micrometers.

17. The semiconductor substrate structure of claim 14, wherein the first bonding material layer and the second bonding material layer has a thickness in the range of about 5 nm to 50 nm.