Semiconductor device having an active trench and a body trench
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate having a first main surface;
a drift region of a first conductivity type formed in the semiconductor substrate;
a body region of a second conductivity type opposite the first conductivity type formed in the semiconductor substrate above the drift region;
an active gate trench extending from the first main surface and into the body region, the active gate trench including a first electrode coupled to a gate potential;
a source region of the first conductivity type formed in the body region adjacent to the gate trench and coupled to a source potential;
a first body trench extending from the first main surface and into the body region, the first body trench including a second electrode coupled to the source potential; and
an inactive gate trench extending from the first main surface and into the body region, the inactive gate trench including a third electrode coupled to the gate potential,wherein a conductive channel is present along the active gate trench in case of the gate potential being at an on-voltage of the semiconductor device,wherein no conductive channel is present along the inactive gate trench in case of the gate potential being at the on-voltage.
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Accused Products
Abstract
A semiconductor device includes: a drift region formed in a semiconductor substrate; a body region above the drift region; an active gate trench extending from a first main surface and into the body region and including a first electrode coupled to a gate potential; a source region formed in the body region adjacent to the gate trench and coupled to a source potential; a first body trench extending from the first main surface and into the body region and including a second electrode coupled to the source potential; and an inactive gate trench extending from the first main surface and into the body region and including a third electrode coupled to the gate potential. A conductive channel is present along the active gate trench when the gate potential is at an on-voltage, whereas no conductive channel is present along the inactive gate trench for the same gate potential condition.
24 Citations
20 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate having a first main surface; a drift region of a first conductivity type formed in the semiconductor substrate; a body region of a second conductivity type opposite the first conductivity type formed in the semiconductor substrate above the drift region; an active gate trench extending from the first main surface and into the body region, the active gate trench including a first electrode coupled to a gate potential; a source region of the first conductivity type formed in the body region adjacent to the gate trench and coupled to a source potential; a first body trench extending from the first main surface and into the body region, the first body trench including a second electrode coupled to the source potential; and an inactive gate trench extending from the first main surface and into the body region, the inactive gate trench including a third electrode coupled to the gate potential, wherein a conductive channel is present along the active gate trench in case of the gate potential being at an on-voltage of the semiconductor device, wherein no conductive channel is present along the inactive gate trench in case of the gate potential being at the on-voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device, comprising:
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a semiconductor substrate having a first main surface; a drift region of a first conductivity type formed in the semiconductor substrate; a body region of a second conductivity type opposite the first conductivity type formed in the semiconductor substrate above the drift region; and a transistor cell comprising; an active gate trench extending from the first main surface and into the body region, the active gate trench including a first electrode coupled to a gate potential; a source region of the first conductivity type formed in the body region adjacent to the gate trench and coupled to a source potential; a first body trench extending from the first main surface and into the body region, the first body trench including a second electrode coupled to the source potential; and an inactive gate trench extending from the first main surface and into the body region, the inactive gate trench including a third electrode coupled to the gate potential, wherein a conductive channel of the transistor cell is present along the active gate trench in case of the gate potential being at an on-voltage of the semiconductor device, wherein no conductive channel of the transistor cell is present along the inactive gate trench in case of the gate potential being at the on-voltage. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification