Gate-all-around fin device
First Claim
1. A method comprising:
- forming a central well of a first conductivity type located in a substrate of the first conductivity type;
forming a doped well ring of a second conductivity type in the substrate and enclosing the central well of the first conductivity type;
forming a doped well region in the substrate adjacent the doped well ring, wherein the doped well ring is interposed between the doped well region and the central well;
forming a first doped fin contact region of the first conductivity type to form a source contact for a first fin to form a source located over the central well of the first conductivity type; and
forming a second doped fin contact region of the second conductivity type to form drain contact regions for a second fin to form a drain located over the doped well ring, wherein the drain contact regions include alternating p regions and n regions formed directly on the second fin.
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Accused Products
Abstract
A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.
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Citations
16 Claims
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1. A method comprising:
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forming a central well of a first conductivity type located in a substrate of the first conductivity type; forming a doped well ring of a second conductivity type in the substrate and enclosing the central well of the first conductivity type; forming a doped well region in the substrate adjacent the doped well ring, wherein the doped well ring is interposed between the doped well region and the central well; forming a first doped fin contact region of the first conductivity type to form a source contact for a first fin to form a source located over the central well of the first conductivity type; and forming a second doped fin contact region of the second conductivity type to form drain contact regions for a second fin to form a drain located over the doped well ring, wherein the drain contact regions include alternating p regions and n regions formed directly on the second fin. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification