Semiconductor device

• US 10,388,797 B2
• Filed: 03/01/2018
• Issued: 08/20/2019
• Est. Priority Date: 03/18/2014
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Suzawa, Hideomi
• Primary Examiner(s): Kim, Tong-Ho
• Application Number:
  US15/908,851
• Publication Number:
  US 20180190828A1
• Time in Patent Office: Days
• Field of Search: 257306, 257 43
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/0657 characterised by the shape of the body
• CPC Class Codes: H01L 29/16 including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10B 41/70 the floating gate being an electrode shared by two or more components

Abstract

Provided is a highly integrated semiconductor device, a semiconductor device with large storage capacity with respect to an area occupied by a capacitor, a semiconductor device capable of high-speed writing, a semiconductor device capable of high-speed reading, a semiconductor device with low power consumption, or a highly reliable semiconductor device. The semiconductor device includes a first transistor, a second transistor, and a capacitor. A conductor penetrates and connects the first transistor, the capacitor, and the second transistor. An insulator is provided on a side surface of the conductor that penetrates the capacitor.

Claims

1. A semiconductor device comprising:

a first transistor, the first transistor comprising;

a first semiconductor;

a first insulator; and

a first conductor;

a second insulator over the first transistor;

a capacitor over the second insulator, the capacitor comprising;

a first part of a second conductor;

a third conductor; and

a third insulator;

a fourth insulator over the capacitor;

a second transistor over the fourth insulator, the second transistor comprising;

a second semiconductor;

a fifth insulator; and

a fourth conductor; and

a fifth conductor over the second semiconductor,

wherein a part of the first conductor overlaps with the first semiconductor with the first insulator interposed therebetween,

wherein a part of the fourth conductor overlaps with the second semiconductor with the fifth insulator interposed therebetween,

wherein the first part of the second conductor faces the third conductor with the third insulator interposed therebetween,

wherein the second conductor is electrically connected to the first conductor through a first opening in the second insulator,

wherein the second conductor is electrically connected to the fifth conductor through a second opening in the fourth insulator and a third opening in the second semiconductor,

wherein a second part of the second conductor is provided in the second opening, and

wherein a third part of the second conductor is provided in the first opening.

2. The semiconductor device according to claim 1, wherein the third insulator comprises an element included in the second conductor.

3. The semiconductor device according to claim 1, wherein the first semiconductor comprises silicon.

4. The semiconductor device according to claim 1, wherein the second semiconductor comprises indium.

5. The semiconductor device according to claim 1, wherein the first semiconductor is a part of a semiconductor substrate.

6. The semiconductor device according to claim 1, wherein the first semiconductor has a projection provided on a semiconductor substrate.

7. A semiconductor device comprising:

a capacitor comprising;

a first part of a first conductor;

a second conductor; and

a first insulator;

a second insulator over the capacitor;

a transistor over the second insulator, the transistor comprising;

a first semiconductor;

a third insulator; and

a third conductor; and

a fourth conductor over the first semiconductor,

wherein the first conductor is electrically connected to the fourth conductor,

wherein a second part of the first conductor is provided in a first opening of the second insulator,

wherein a third part of the first conductor is provided in a second opening of the first semiconductor, and

wherein the first conductor is in contact with the fourth conductor.

8. The semiconductor device according to claim 7, further comprising:

a second transistor below the capacitor and a fourth insulator, the second transistor comprising a second semiconductor, a fifth insulator and a fifth conductor,

wherein the fourth insulator is provided over the second transistor,

wherein the capacitor is provided over the fourth insulator, and

wherein a fourth part of the first conductor is provided in a third opening in the fourth insulator.

9. The semiconductor device according to claim 8, wherein the first part of the first conductor overlaps with the fifth conductor.

10. A semiconductor device comprising:

a capacitor comprising;

a first part of a first conductor;

a second conductor; and

a first insulator;

a second insulator over the capacitor;

a transistor over the second insulator, the transistor comprising;

a semiconductor;

a third insulator; and

a third conductor,

wherein a second part of the first conductor is provided in a first opening in the second insulator, and

wherein a third part of the first conductor is provided in a second opening in the semiconductor.

11. The semiconductor device according to claim 10, further comprising a fourth conductor over the semiconductor, wherein the first part of the first conductor overlaps with the fourth conductor.